Inventor · disambiguated record
Josef Mathuni
Also filed as: MATHUNI JOSEF
15 granted patents·2 pending applications·356 citations·filing 1982–2012
93Inventor score
Files withSIEMENS AG6INFINEON TECHNOLOGIES AG5R3T GMBH RAPID REACTIVE RADICA2MATHUNI JOSEF1R3T RAPID REACTIVE RADICALS TE1
Top patents by PatentIndex Score
17 records- 0194US5945351AMethod for etching damaged zones on an edge of a semiconductor substrate, and etching systemSIEMENS AG·Filed 1997·Granted Aug 31, 1999·193 cites·9 claims
- 0277US5693182AMethod for damage etching the back side of a semiconductor disk having a protected front sideSIEMENS AG·Filed 1996·Granted Dec 2, 1997·51 cites·8 claims
- 0373US6706141B1Device to generate excited/ionized particles in a plasmaR3T RAPID REACTIVE RADICALS TE·Filed 2000·Granted Mar 16, 2004·15 cites·16 claims
- 0465US5489362AMethod for generating excited neutral particles for etching and deposition processes in semiconductor technology with a plasma discharge fed by microwave energySECON HALBLEITERPRODUKTIONSGER·Filed 1992·Granted Feb 6, 1996·33 cites·10 claims
- 0556US6013136AApparatus for plasma-supported back etching of a semiconductor waferSIEMENS AG·Filed 1996·Granted Jan 11, 2000·18 cites·6 claims
- 0654US7063921B2Photomask, in particular alternating phase shift mask, with compensation structureINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 20, 2006·7 cites·16 claims
- 0750US6919147B2Production method for a halftone phase maskINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 19, 2005·1 cites·15 claims
- 0848US8815746B2Apparatus and method for producing microcomponents and use ofMATHUNI JOSEF·Filed 2012·Granted Aug 26, 2014·0 cites·7 claims
- 0948US5874366AMethod for etching a semiconductor substrate and etching systemSIEMENS AG·Filed 1997·Granted Feb 23, 1999·15 cites·11 claims
- 1047US4390394AMethod of structuring with metal oxide masks by reactive ion-beam etchingSIEMENS AG·Filed 1982·Granted Jun 28, 1983·17 cites·5 claims
- 1147US2009212018A1Apparatus and method for producing microcomponents and use ofR3T GMBH RAPID REACTIVE RADICA·Filed 2008·Application pending·0 cites
- 1244US6569772B2Method for producing an alternating phase maskINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 27, 2003·1 cites·8 claims
- 1341US7665416B2Apparatus for generating excited and/or ionized particles in a plasma and a method for generating ionized particlesR3T GMBH RAPID REACTIVE RADICA·Filed 2006·Granted Feb 23, 2010·0 cites·28 claims
- 1438US7071110B2Process for the plasma etching of materials not containing siliconINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jul 4, 2006·0 cites·7 claims
- 1533US2002137353A1Method and device for delacquering an area on a mask substrateFiled 2002·Application pending·0 cites
- 1631US6152073AAssembly for the manufacture of highly integrated circuits on a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 1999·Granted Nov 28, 2000·1 cites·3 claims
- 1729US5073515AMethod for manufacturing a trench capacitor of a one-transistor memory cell in a semiconductor substrate with a self-aligned capacitor plate electrodeSIEMENS AG·Filed 1990·Granted Dec 17, 1991·4 cites·33 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →