Inventor · disambiguated record
Stefan Hau-Riege
Also filed as: HAU-RIEGE STEFAN · HAU-RIEGE STEFAN P · HAU-RIEGE STEFAN PETER
16 granted patents·3 pending applications·255 citations·filing 2001–2010
94Inventor score
Files withINTEL CORP8ADVANCED MICRO DEVICES INC3UNIV CALIFORNIA3L LIVERMORE NAT SECURITY LLC2ECKELS J DEL1
Top patents by PatentIndex Score
19 records- 0192US6667225B2Wafer-bonding using solder and method of making the sameINTEL CORP·Filed 2001·Granted Dec 23, 2003·68 cites·18 claims
- 0285US6822473B1Determination of permeability of layer material within interconnectADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 23, 2004·28 cites·25 claims
- 0383US7867441B2Low to moderate temperature nanolaminate heaterL LIVERMORE NAT SECURITY LLC·Filed 2006·Granted Jan 11, 2011·14 cites·7 claims
- 0482US6717268B2Electromigration-reliability improvement of dual damascene interconnectsINTEL CORP·Filed 2001·Granted Apr 6, 2004·28 cites·8 claims
- 0581US6762597B1Structure, system, and method for assessing electromigration permeability of layer material within interconnectADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 13, 2004·25 cites·26 claims
- 0677US6925216B2Direct-patterned optical waveguides on amorphous silicon filmsUNIV CALIFORNIA·Filed 2003·Granted Aug 2, 2005·22 cites·33 claims
- 0772US7087516B2Electromigration-reliability improvement of dual damascene interconnectsINTEL CORP·Filed 2003·Granted Aug 8, 2006·16 cites·3 claims
- 0867US6579795B1Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliabilityINTEL CORP·Filed 2002·Granted Jun 17, 2003·14 cites·20 claims
- 0966US7212282B2Method for characterizing mask defects using image reconstruction from X-ray diffraction patternsUNIV CALIFORNIA·Filed 2004·Granted May 1, 2007·6 cites·65 claims
- 1065US7672430B2Area X-ray or UV camera system for high-intensity beamsL LIVERMORE NAT SECURITY LLC·Filed 2008·Granted Mar 2, 2010·4 cites·27 claims
- 1165US6833321B2Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliabilityINTEL CORP·Filed 2001·Granted Dec 21, 2004·10 cites·4 claims
- 1264US7153774B2Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliabilityINTEL CORP·Filed 2002·Granted Dec 26, 2006·14 cites·12 claims
- 1350US7236565B2Tamper to delay motion and decrease ionization of a sample during short pulse x-ray imagingUNIV CALIFORNIA·Filed 2005·Granted Jun 26, 2007·0 cites·57 claims
- 1448US6870262B2Wafer-bonding using solder and method of making the sameINTEL CORP·Filed 2003·Granted Mar 22, 2005·2 cites·3 claims
- 1546US6768323B1System and method for determining location of extrusion in interconnectADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 27, 2004·3 cites·20 claims
- 1646US2011083661A1Low to Moderate Temperature Nanolaminate HeaterECKELS J DEL·Filed 2010·Application pending·0 cites
- 1745US7300871B2Method of doping a conductive layer near a viaINTEL CORP·Filed 2004·Granted Nov 27, 2007·1 cites·4 claims
- 1838US2006234135A1Method for repairing mask-blank defects using repair-zone compensationUNIV CA·Filed 2005·Application pending·0 cites
- 1935US2003194857A1Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliabilityFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →