Inventor · disambiguated record
Seung-Keun Lee
Also filed as: LEE SEUNG J · LEE SEUNG K · LEE SEUNG-KEUN
46 granted patents·3 pending applications·1,121 citations·filing 1991–2014
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD40DAEWOO HEAVY IND CO LTD2DONGGUK UNIVERSITY1EXCEL SEMICONDUCTOR INC1FIDELIX CO LTD1
Top patents by PatentIndex Score
49 records- 0194US7054199B2Multi level flash memory device and program methodSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 30, 2006·98 cites·24 claims
- 0292US5740107ANonvolatile integrated circuit memories having separate read/write pathsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Apr 14, 1998·105 cites·9 claims
- 0390US6587375B2Row decoder for a nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 1, 2003·57 cites·16 claims
- 0489US7327609B2Methods of program-verifying a multi-bit nonvolatile memory device and circuit thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 5, 2008·22 cites·19 claims
- 0588US5157279AData output driver with substrate biasing producing high output gainSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Oct 20, 1992·72 cites·11 claims
- 0686US6781904B2Low-voltage semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 24, 2004·38 cites·20 claims
- 0786US5986947ACharge pump circuits having floating wellsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 16, 1999·64 cites·15 claims
- 0885US7394719B2Flash memory device with burst read mode of operationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 1, 2008·14 cites·11 claims
- 0983US5963475AAdvanced nonvolatile memories adaptable to dynamic random access memories and methods of operating thereinSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Oct 5, 1999·61 cites·11 claims
- 1082US5805498ANonvolatile semiconductor memory device having a sense amplifier coupled to memory cell strings with reduced number of selection transistorsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Sep 8, 1998·52 cites·2 claims
- 1181US7079417B2Read-while-write flash memory devices having local row decoder circuits activated by separate read and write signalsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 18, 2006·32 cites·26 claims
- 1281US6654290B2Flash memory device with cell current measuring scheme using write driverSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 25, 2003·30 cites·9 claims
- 1380US6690227B2Charge pump circuit for use in high voltage generating circuitSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 10, 2004·29 cites·23 claims
- 1478US6442079B2Voltage regulator circuit for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 27, 2002·25 cites·22 claims
- 1578US5929691AMode setting circuit for a memory deviceSAMSUNG EELECTRONICS CO LTD·Filed 1997·Granted Jul 27, 1999·51 cites·6 claims
- 1677US7668011B2Serial flash memory device and precharging method thereofEXCEL SEMICONDUCTOR INC·Filed 2006·Granted Feb 23, 2010·15 cites·9 claims
- 1777US7352618B2Multi-level cell memory device and associated read methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 1, 2008·10 cites·38 claims
- 1876US6542406B2Row decoder of a NOR-type flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 1, 2003·24 cites·9 claims
- 1975US6507522B2Method for erasing memory cells in a nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 14, 2003·22 cites·20 claims
- 2075US5471429ABurn-in circuit and method therefor of semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Nov 28, 1995·36 cites·24 claims
- 2175US5315173AData buffer circuit with delay circuit to increase the length of a switching transition period during data signal inversionSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted May 24, 1994·28 cites·14 claims
- 2274US6831860B2Nonvolatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 14, 2004·20 cites·22 claims
- 2373US7002869B2Voltage regulator circuitSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 21, 2006·20 cites·25 claims
- 2473US6665229B2Semiconductor memory device row decoder structures having reduced layout area, and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 16, 2003·20 cites·11 claims
- 2570US7254061B2Memory devices using tri-state buffers to discharge data lines, and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 7, 2007·7 cites·18 claims
- 2670US7142457B2Non-volatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 28, 2006·6 cites·6 claims
- 2762US5547244ACanopy mounting device for a skid steer loaderDAEWOO HEAVY IND CO LTD·Filed 1994·Granted Aug 20, 1996·25 cites·6 claims
- 2861US9312024B2Flash memory device having efficient refresh operationFIDELIX CO LTD·Filed 2014·Granted Apr 12, 2016·2 cites·13 claims
- 2961US5920504ASemiconductor memory having embedding lockable cellsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 6, 1999·21 cites·2 claims
- 3059US6778000B2Integrated circuit devices that provide constant time delays irrespective of temperature variationSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 17, 2004·12 cites·9 claims
- 3158US7042795B2Flash memory device with burst read mode of operationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 9, 2006·8 cites·30 claims
- 3257US6970384B2Programming method of flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 29, 2005·9 cites·12 claims
- 3356US5984040APedal locking device for a loaderDAEWOO HEAVY IND CO LTD·Filed 1997·Granted Nov 16, 1999·22 cites·12 claims
- 3455US7427888B2Charge pump circuit operating responsive to a modeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 23, 2008·12 cites·15 claims
- 3555US7082058B2Non-volatile semiconductor memory device having sense amplifier with increased speedSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 25, 2006·8 cites·23 claims
- 3654US7656714B2Bitline bias circuit and nor flash memory device including the bitline bias circuitSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 2, 2010·3 cites·8 claims
- 3754US7016232B2Non-volatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 21, 2006·6 cites·23 claims
- 3853US7271436B2Flash memory devices including a pass transistorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 18, 2007·5 cites·20 claims
- 3951US7428169B2Nonvolatile semiconductor memory device and voltage generating circuit for the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 23, 2008·2 cites·31 claims
- 4051US6867628B2Semiconductor memory delay circuitSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 15, 2005·6 cites·18 claims
- 4150US6842384B2Nonvolatile semiconductor memory with power-up read modeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 11, 2005·6 cites·22 claims
- 4250US5390150ASemiconductor memory device with redundancy structure suppressing power consumptionSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Feb 14, 1995·13 cites·8 claims
- 4338US6944085B2Semiconductor memory device with reduced chip area and improved redundancy efficencySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 13, 2005·1 cites·17 claims
- 4437US8190606B2System for providing lyrics for digital audio filesKIM MYUNG GU·Filed 2004·Granted May 29, 2012·2 cites·15 claims
- 4537US7286411B2Row decoder circuit for use in non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 23, 2007·0 cites·19 claims
- 4633US2006120196A1Trimming circuits including isolated well regions and related memory devicesJEON HONG-SOO·Filed 2005·Application pending·0 cites
- 4732US2002186590A1Nonvolatile semiconductor memory device having hierarchical sector structureSAMSUNG ELECTRONICS CO LTD·Filed 2002·Application pending·0 cites
- 4830US5663920ASemiconductor memory word line driver circuitFiled 1996·Granted Sep 2, 1997·0 cites·13 claims
- 4930US2005254310A1Nonvolatile semiconductor memory device including ferroelectric semiconductor pattern and methods for writing data in and reading data from the sameDONGGUK UNIVERSITY·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →