Inventor · disambiguated record
Hungtse Lin
Also filed as: LIN HUNGTSE
4 granted patents·138 citations·filing 2001–2002
80Inventor score
Files withTAIWAN SEMICONDUCTOR MFG4
Top patents by PatentIndex Score
4 records- 0189US6560862B1Modified pad for copper/low-kTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 13, 2003·65 cites·16 claims
- 0286US6518166B1Liquid phase deposition of a silicon oxide layer for use as a liner on the surface of a dual damascene opening in a low dielectric constant layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Feb 11, 2003·41 cites·19 claims
- 0375US6818533B2Epitaxial plasma enhanced chemical vapor deposition (PECVD) method providing epitaxial layer with attenuated defectsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 16, 2004·25 cites·13 claims
- 0455US6730580B2Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealingTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 4, 2004·7 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →