Inventor · disambiguated record
Masahito Otsuki
Also filed as: OTSUKI MASAHITO
30 granted patents·483 citations·filing 1993–2017
97Inventor score
Files withFUJI ELECTRIC CO LTD24FUJI ELEC DEVICE TECH CO LTD2FUJI ELECTRIC SYSTEMS CO LTD1FUJI ELECTRONIC CO LTD1OTSUKI MASAHITO1
Top patents by PatentIndex Score
30 records- 0193US10236677B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Mar 19, 2019·6 cites·14 claims
- 0289US6737705B2Insulated gate semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2001·Granted May 18, 2004·58 cites·5 claims
- 0387US9559171B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Jan 31, 2017·5 cites·25 claims
- 0484US9881916B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Jan 30, 2018·4 cites·9 claims
- 0582US9905555B2Semiconductor device and semiconductor device manufacturing methodFUJI ELECTRIC CO LTD·Filed 2016·Granted Feb 27, 2018·3 cites·10 claims
- 0681US7633122B2Insulated gate semiconductor device and method of manufacturing the sameOTSUKI MASAHITO·Filed 2005·Granted Dec 15, 2009·13 cites·11 claims
- 0780US9793392B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Oct 17, 2017·3 cites·12 claims
- 0878US6559023B2Method of fabricating a semiconductor device with phosphorous and boron ion implantation, and by annealing to control impurity concentration thereofFUJI ELECTRIC CO LTD·Filed 2002·Granted May 6, 2003·26 cites·18 claims
- 0977US5561393AControl device of semiconductor power deviceFUJI ELECTRIC CO LTD·Filed 1994·Granted Oct 1, 1996·42 cites·26 claims
- 1074US10276666B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Apr 30, 2019·2 cites·8 claims
- 1174US8008734B2Power semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2008·Granted Aug 30, 2011·6 cites·19 claims
- 1274US6501128B1Insulated gate transistor and the method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2000·Granted Dec 31, 2002·20 cites·2 claims
- 1372US5705835ASemiconductor device and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 1995·Granted Jan 6, 1998·35 cites·29 claims
- 1471US7737490B2Vertical and trench type insulated gate MOS semiconductor deviceFUJI ELECTRIC SYSTEMS CO LTD·Filed 2007·Granted Jun 15, 2010·4 cites·17 claims
- 1570US5894139ASemiconductor device structure for insulated gate bipolar transistorFUJI ELECTRIC CO LTD·Filed 1997·Granted Apr 13, 1999·34 cites·7 claims
- 1670US5459339ADouble gate semiconductor device and control device thereofFUJI ELECTRIC CO LTD·Filed 1993·Granted Oct 17, 1995·34 cites·13 claims
- 1768US6218888B1Insulated gate bipolar transistor device with a current limiting circuitFUJI ELECTRIC CO LTD·Filed 1997·Granted Apr 17, 2001·28 cites·3 claims
- 1866US5559355AVertical MOS semiconductor deviceFUJI ELECTRIC CO LTD·Filed 1995·Granted Sep 24, 1996·27 cites·8 claims
- 1965US6621120B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2002·Granted Sep 16, 2003·13 cites·8 claims
- 2062US5397905APower semiconductor device having an insulated gate field effect transistor and a bipolar transistorFUJI ELECTRIC CO LTD·Filed 1994·Granted Mar 14, 1995·22 cites·4 claims
- 2160US5378903ASemiconductor device with low on-voltage and large controllable turn-off currentFUJI ELECTRIC CO LTD·Filed 1994·Granted Jan 3, 1995·20 cites·8 claims
- 2257US6670650B2Power semiconductor rectifier with ring-shaped trenchesFUJI ELECTRIC CO LTD·Filed 2002·Granted Dec 30, 2003·8 cites·25 claims
- 2357US5530277AInsulated-gate bipolar transistorFUJI ELECTRIC CO LTD·Filed 1994·Granted Jun 25, 1996·25 cites·5 claims
- 2456US5714774ATwo-gate semiconductor power switching deviceFUJI ELECTRIC CO LTD·Filed 1994·Granted Feb 3, 1998·17 cites·15 claims
- 2551US5561313AProtective diode for transistorFUJI ELECTRIC CO LTD·Filed 1995·Granted Oct 1, 1996·16 cites·6 claims
- 2650US7151297B2Insulated gate semiconductor deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2004·Granted Dec 19, 2006·4 cites·2 claims
- 2746US7462911B2Insulated gate semiconductor deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2006·Granted Dec 9, 2008·0 cites·6 claims
- 2843US8242556B2Vertical and trench type insulated gate MOS semiconductor deviceYOSHIKAWA KOH·Filed 2010·Granted Aug 14, 2012·0 cites·2 claims
- 2941US5559347AInsulated gate-type bipolar transistorFUJI ELECTRONIC CO LTD·Filed 1995·Granted Sep 24, 1996·8 cites·6 claims
- 3030US5606183ADouble-gated turn-off thyristorFUJI ELECTRIC CO LTD·Filed 1994·Granted Feb 25, 1997·0 cites·3 claims
Join the waitlist — get patent alerts
Get an alert when Masahito Otsuki files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →