Inventor · disambiguated record
Kie Y. Ahn
Also filed as: AH KIE Y · AHN KIE · AHN KIE Y · AHN KIE YEUNG
613 granted patents·49 pending applications·34,192 citations·filing 1975–2016
99Inventor score
Top patents by PatentIndex Score
662 records- 0199US7902582B2Tantalum lanthanide oxynitride filmsMICRON TECHNOLOGY INC·Filed 2009·Granted Mar 8, 2011·523 cites·25 claims
- 0299US7405454B2Electronic apparatus with deposited dielectric layersMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 29, 2008·585 cites·28 claims
- 0399US7393736B2Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectricsMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 1, 2008·582 cites·59 claims
- 0499US7312494B2Lanthanide oxide / hafnium oxide dielectric layersMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 25, 2007·605 cites·28 claims
- 0599US7235501B2Lanthanum hafnium oxide dielectricsMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 26, 2007·658 cites·58 claims
- 0699US7192892B2Atomic layer deposited dielectric layersMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 20, 2007·630 cites·56 claims
- 0799US7192824B2Lanthanide oxide / hafnium oxide dielectric layersMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 20, 2007·638 cites·45 claims
- 0899US7169673B2Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectricsMICRON TECHNOLOGY INC·Filed 2005·Granted Jan 30, 2007·120 cites·26 claims
- 0999US7135421B2Atomic layer-deposited hafnium aluminum oxideMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 14, 2006·664 cites·61 claims
- 1099US7045430B2Atomic layer-deposited LaAlO3 films for gate dielectricsMICRON TECHNOLOGY INC·Filed 2002·Granted May 16, 2006·723 cites·53 claims
- 1199US6921702B2Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectricsMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 26, 2005·279 cites·22 claims
- 1299US6835111B2Field emission display having porous silicon dioxide layerMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 28, 2004·109 cites·33 claims
- 1399US6778441B2Integrated circuit memory device and methodMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 17, 2004·220 cites·81 claims
- 1499US6689660B14 F2 folded bit line DRAM cell structure having buried bit and word linesMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 10, 2004·356 cites·41 claims
- 1599US6570248B1Structure and method for a high-performance electronic packaging assemblyMICRON TECHNOLOGY INC·Filed 2001·Granted May 27, 2003·363 cites·39 claims
- 1699US6514820B2Method for forming single electron resistor memoryMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 4, 2003·253 cites·10 claims
- 1799US6514828B2Method of fabricating a highly reliable gate oxideMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 4, 2003·464 cites·39 claims
- 1899US6504201B1Memory cell having a vertical transistor with buried source/drain and dual gatesMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 7, 2003·215 cites·28 claims
- 1999US6492233B2Memory cell with vertical transistor and buried word and body linesMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 10, 2002·154 cites·29 claims
- 2099US6429120B1Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metalsMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 6, 2002·192 cites·25 claims
- 2199US6424001B1Flash memory with ultra thin vertical body transistorsMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 23, 2002·336 cites·49 claims
- 2299US6399979B1Memory cell having a vertical transistor with buried source/drain and dual gatesMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 4, 2002·208 cites·35 claims
- 2399US6191448B1Memory cell with vertical transistor and buried word and body linesMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 20, 2001·153 cites·55 claims
- 2499US6150687AMemory cell having a vertical transistor with buried source/drain and dual gatesMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 21, 2000·451 cites·24 claims
- 2599US6072209AFour F2 folded bit line DRAM cell structure having buried bit and word linesMICRO TECHNOLOGY INC·Filed 1997·Granted Jun 6, 2000·395 cites·17 claims
- 2699US6031263ADEAPROM and transistor with gallium nitride or gallium aluminum nitride gateMICRON TECHNOLOGY INC·Filed 1997·Granted Feb 29, 2000·242 cites·53 claims
- 2799US5909618AMethod of making memory cell with vertical transistor and buried word and body linesMICRON TECHNOLOGY INC·Filed 1997·Granted Jun 1, 1999·353 cites·9 claims
- 2898US7727908B2Deposition of ZrA1ON filmsMICRON TECHNOLOGY INC·Filed 2006·Granted Jun 1, 2010·69 cites·22 claims
- 2998US7687409B2Atomic layer deposited titanium silicon oxide filmsMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 30, 2010·79 cites·52 claims
- 3098US7670646B2Methods for atomic-layer depositionMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 2, 2010·55 cites·25 claims
- 3198US7615438B2Lanthanide yttrium aluminum oxide dielectric filmsMICRON TECHNOLOGY INC·Filed 2005·Granted Nov 10, 2009·81 cites·60 claims
- 3298US7563730B2Hafnium lanthanide oxynitride filmsMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 21, 2009·49 cites·76 claims
- 3398US7531869B2Lanthanum aluminum oxynitride dielectric filmsMICRON TECHNOLOGY INC·Filed 2006·Granted May 12, 2009·50 cites·25 claims
- 3498US7489002B2Memory having a vertical transistorMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 10, 2009·84 cites·45 claims
- 3598US7432548B2Silicon lanthanide oxynitride filmsMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 7, 2008·78 cites·73 claims
- 3698US7410910B2Lanthanum aluminum oxynitride dielectric filmsMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 12, 2008·62 cites·58 claims
- 3798US7365027B2ALD of amorphous lanthanide doped TiOx filmsMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 29, 2008·66 cites·31 claims
- 3898US7214994B2Self aligned metal gates on high-k dielectricsMICRON TECHNOLOGY INC·Filed 2006·Granted May 8, 2007·83 cites·38 claims
- 3998US7211492B2Self aligned metal gates on high-k dielectricsMICRON TECHNOLOGY INC·Filed 2005·Granted May 1, 2007·85 cites·48 claims
- 4098US7195999B2Metal-substituted transistor gatesMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 27, 2007·105 cites·61 claims
- 4198US7160577B2Methods for atomic-layer deposition of aluminum oxides in integrated circuitsMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 9, 2007·168 cites·19 claims
- 4298US7049192B2Lanthanide oxide / hafnium oxide dielectricsMICRON TECHNOLOGY INC·Filed 2003·Granted May 23, 2006·140 cites·45 claims
- 4398US7026694B2Lanthanide doped TiOx dielectric films by plasma oxidationMICRON TECHNOLOGY INC·Filed 2004·Granted Apr 11, 2006·126 cites·27 claims
- 4498US6989573B2Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate gate dielectricsMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 24, 2006·169 cites·120 claims
- 4598US6958302B2Atomic layer deposited Zr-Sn-Ti-O films using TiI4MICRON TECHNOLOGY INC·Filed 2002·Granted Oct 25, 2005·160 cites·38 claims
- 4698US6900122B2Low-temperature grown high-quality ultra-thin praseodymium gate dielectricsMICRON TECHNOLOGY INC·Filed 2001·Granted May 31, 2005·171 cites·55 claims
- 4798US6858444B2Method for making a ferroelectric memory transistorMICRON TECHNOLOGY INC·Filed 2003·Granted Feb 22, 2005·139 cites·15 claims
- 4898US6858120B2Method and apparatus for the fabrication of ferroelectric filmsMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 22, 2005·107 cites·7 claims
- 4998US6852167B2Methods, systems, and apparatus for uniform chemical-vapor depositionsMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 8, 2005·148 cites·47 claims
- 5098US6844203B2Gate oxides, and methods of formingMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 18, 2005·263 cites·34 claims
Showing the top 50 of 662 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →