Inventor · disambiguated record
Yusuke Maeyama
Also filed as: MAEYAMA YUSUKE
6 granted patents·3 pending applications·9 citations·filing 2006–2021
71Inventor score
Top patents by PatentIndex Score
9 records- 0172US7544552B2Method for manufacturing junction semiconductor deviceHONDA MOTOR CO LTD·Filed 2006·Granted Jun 9, 2009·6 cites·21 claims
- 0260US12363927B2Wide gap semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2021·Granted Jul 15, 2025·0 cites·8 claims
- 0356US9960228B2Wide gap semiconductor device and method of manufacturing the sameSHINDENGEN ELECTRIC MFG·Filed 2015·Granted May 1, 2018·1 cites·10 claims
- 0456US8937319B2Schottky barrier diodeMAEYAMA YUSUKE·Filed 2012·Granted Jan 20, 2015·2 cites·8 claims
- 0546US2023042772A1Wide gap semiconductor device and method for manufacturing wide gap semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2021·Application pending·0 cites
- 0644US9496366B2Method for manufacturing silicon carbide (SiC) semiconductor device by introducing nitrogen concentration of 5X1019 cm-3 or more at a boundary surface between thermal oxide film and the SiC substrate and then removing the thermal oxide filmSHINDENGEN ELECTRIC MFG·Filed 2013·Granted Nov 15, 2016·0 cites·10 claims
- 0740US2006214268A1SiC semiconductor deviceHONDA MOTOR CO LTD·Filed 2006·Application pending·0 cites
- 0839US2011169015A1Bipolar semiconductor device and method for manufacturing sameHONDA MOTOR CO LTD·Filed 2009·Application pending·0 cites
- 0934US11195907B2Semiconductor device and semiconductor device manufacturing methodSHINDENGEN ELECTRIC MFG·Filed 2018·Granted Dec 7, 2021·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →