Inventor · disambiguated record
Nien-Tze Yeh
Also filed as: YEH NIEN-TZE
10 granted patents·9 pending applications·105 citations·filing 2008–2025
87Inventor score
Files withTEKCORE CO LTD7XIAMEN SANAN INTEGRATED CIRCUIT CO LTD5HUNAN SANAN SEMICONDUCTOR CO LTD3HUNAN SAN’AN SEMICONDUCTOR CO LTD3CHANG HSIANG-SZU1
Top patents by PatentIndex Score
19 records- 0185USD619976SLight-emitting diodeTEKCORE CO LTD·Filed 2009·Granted Jul 20, 2010·34 cites·1 claims
- 0283US8378376B2Vertical light-emitting diodeTEKCORE CO LTD·Filed 2010·Granted Feb 19, 2013·5 cites·20 claims
- 0375USD647494SLight-emitting diodeTEKCORE CO LTD·Filed 2011·Granted Oct 25, 2011·24 cites·1 claims
- 0475USD647493SLight-emitting diodeTEKCORE CO LTD·Filed 2011·Granted Oct 25, 2011·23 cites·1 claims
- 0570USD647495SLight-emitting diodeTEKCORE CO LTD·Filed 2011·Granted Oct 25, 2011·18 cites·1 claims
- 0659US7901963B2Surface roughening method for light emitting diode substrateTEKCORE CO LTD·Filed 2008·Granted Mar 8, 2011·1 cites·4 claims
- 0756US2023361056A1Semiconductor device and method of making the same and seal ring structureHUNAN SAN’AN SEMICONDUCTOR CO LTD·Filed 2023·Application pending·0 cites
- 0855US2024258385A1Gallium nitride bidirectional switch deviceHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2024·Application pending·0 cites
- 0953US2024234565A1Hemt device and semiconductor deviceHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2024·Application pending·0 cites
- 1053US2023299128A1Lateral field-effect transistor and preparing methodHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2023·Application pending·0 cites
- 1152US2023290837A1Group iii-v compound semiconductor device and passivation structure adapted thereinXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 1252US2025221016A1Integrated device and preparation method thereofHUNAN SAN’AN SEMICONDUCTOR CO LTD·Filed 2024·Application pending·0 cites
- 1348US2025311368A1Power device and manufacturing method thereofHUNAN SAN’AN SEMICONDUCTOR CO LTD·Filed 2025·Application pending·0 cites
- 1447US12453183B2Semiconductor device with low potential terminals connected to wellsXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·12 claims
- 1539US11508837B2Epitaxial structure for high-electron-mobility transistor and method for manufacturing the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
- 1638US2012088318A1Method for Fabricating a Vertical Light-Emitting Diode with High BrightnessCHANG HSIANG-SZU·Filed 2011·Application pending·0 cites
- 1734US11088270B2Microwave transistor with a patterned gate structure and manufacturing method thereofXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2018·Granted Aug 10, 2021·0 cites·15 claims
- 1834US2019140046A1Silicon carbide power device employing heterojunction terminal and manufacturing method thereofXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2018·Application pending·0 cites
- 1931US7981705B2Method of manufacturing a vertical type light-emitting diodeTEKCORE CO LTD·Filed 2010·Granted Jul 19, 2011·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →