Inventor · disambiguated record
John G. Richards
Also filed as: RICHARDS JOHN G · RICHARDS JOHN GARETH
18 granted patents·422 citations·filing 1985–1999
96Inventor score
Files withCHIPSCALE INC7MICRO TECHNOLOGY PARTNERS6FEI MICROWAVE INC3FRANKLIN MACHINERY LTD1QUANTIC IND INC1
Top patents by PatentIndex Score
18 records- 0177US5557149ASemiconductor fabrication with contact processing for wrap-around flange interfaceCHIPSCALE INC·Filed 1995·Granted Sep 17, 1996·48 cites·22 claims
- 0275US5912427ASemiconductor bridge explosive deviceQUANTIC IND INC·Filed 1995·Granted Jun 15, 1999·39 cites·21 claims
- 0371US5656547AMethod for making a leadless surface mounted device with wrap-around flange interface contactsCHIPSCALE INC·Filed 1994·Granted Aug 12, 1997·40 cites·16 claims
- 0469US5904496AWafer fabrication of inside-wrapped contacts for electronic devicesCHIPSCALE INC·Filed 1997·Granted May 18, 1999·31 cites·24 claims
- 0568US6121119AResistor fabricationCHIPSCALE INC·Filed 1997·Granted Sep 19, 2000·38 cites·13 claims
- 0667US5280194AElectrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor deviceMICRO TECHNOLOGY PARTNERS·Filed 1992·Granted Jan 18, 1994·33 cites·13 claims
- 0765US6355981B1Wafer fabrication of inside-wrapped contacts for electronic devicesCHIPSCALE INC·Filed 1999·Granted Mar 12, 2002·26 cites·24 claims
- 0864US4811080AMonolithic pin diode and method for its manufactureFEI MICROWAVE INC·Filed 1988·Granted Mar 7, 1989·22 cites·12 claims
- 0964US4738933AMonolithic PIN diode and method for its manufactureFEI MICROWAVE INC·Filed 1985·Granted Apr 19, 1988·23 cites·1 claims
- 1063USD297912SGate gudgeonFRANKLIN MACHINERY LTD·Filed 1985·Granted Oct 4, 1988·11 cites·1 claims
- 1159US5521420AFabricating a semiconductor with an insulative coatingMICRO TECHNOLOGY PARTNERS·Filed 1994·Granted May 28, 1996·26 cites·13 claims
- 1258US5403729AFabricating a semiconductor with an insulative coatingMICRO TECHNOLOGY PARTNERS·Filed 1992·Granted Apr 4, 1995·22 cites·12 claims
- 1350US5455187AMethod of making a semiconductor device with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor deviceMICRO TECHNOLOGY PARTNERS·Filed 1994·Granted Oct 3, 1995·16 cites·6 claims
- 1448US5441898AFabricating a semiconductor with an insulative coatingMICRO TECHNOLOGY PARTNERS·Filed 1994·Granted Aug 15, 1995·14 cites·9 claims
- 1546US5444009AFabricating a semiconductor with an insulative coatingMICRO TECHNOLOGY PARTNERS·Filed 1994·Granted Aug 22, 1995·13 cites·9 claims
- 1644US5592022AFabricating a semiconductor with an insulative coatingCHIPSCALE INC·Filed 1994·Granted Jan 7, 1997·12 cites·29 claims
- 1735US5789817AElectrical apparatus with a metallic layer coupled to a lower region of a substrate and a metallic layer coupled to a lower region of a semiconductor deviceCHIPSCALE INC·Filed 1996·Granted Aug 4, 1998·5 cites·15 claims
- 1824US4746398AGallium arsenide planar tunnel diode methodFEI MICROWAVE INC·Filed 1987·Granted May 24, 1988·3 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →