Inventor · disambiguated record
Erwin J. Prinz
Also filed as: PRINZ ERWIN · PRINZ ERWIN J
22 granted patents·2 pending applications·564 citations·filing 1977–2015
96Inventor score
Top patents by PatentIndex Score
24 records- 0196US7439134B1Method for process integration of non-volatile memory cell transistors with transistors of another typeFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 21, 2008·50 cites·20 claims
- 0293US6816414B1Nonvolatile memory and method of making sameFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Nov 9, 2004·85 cites·25 claims
- 0392US7456465B2Split gate memory cell and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 25, 2008·19 cites·8 claims
- 0492US6791883B2Program and erase in a thin film storage non-volatile memoryFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Sep 14, 2004·66 cites·38 claims
- 0590US7211858B2Split gate storage device including a horizontal first gate and a vertical second gate in a trenchFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 1, 2007·18 cites·20 claims
- 0689US6958265B2Semiconductor device with nanoclustersFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Oct 25, 2005·48 cites·45 claims
- 0785US6751125B2Gate voltage reduction in a memory readFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jun 15, 2004·37 cites·38 claims
- 0884US7491600B2Nanocrystal bitcell process integration for high density applicationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Feb 17, 2009·11 cites·24 claims
- 0983US7341914B2Method for forming a non-volatile memory and a peripheral device on a semiconductor substrateFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Mar 11, 2008·8 cites·20 claims
- 1083US4116163AApparatus to coat a flowing mass of particulate materialFAHRNI PETER·Filed 1977·Granted Sep 26, 1978·46 cites·10 claims
- 1182US7700439B2Silicided nonvolatile memory and method of making sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 20, 2010·10 cites·11 claims
- 1282US6133093AMethod for forming an integrated circuitMOTOROLA INC·Filed 1998·Granted Oct 17, 2000·48 cites·13 claims
- 1380US6828618B2Split-gate thin-film storage NVM cellFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Dec 7, 2004·26 cites·22 claims
- 1479US5981340AMethod of building an EPROM cell without drain disturb and reduced select gate resistanceMOTOROLA INC·Filed 1997·Granted Nov 9, 1999·38 cites·11 claims
- 1576US7732278B2Split gate memory cell and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Jun 8, 2010·5 cites·12 claims
- 1663US7364969B2Semiconductor fabrication process for integrating formation of embedded nonvolatile storage device with formation of multiple transistor device typesFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 29, 2008·7 cites·17 claims
- 1762US6898128B2Programming of a memory with discrete charge storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted May 24, 2005·9 cites·21 claims
- 1857US6295229B1Semiconductor device and method of operating itMOTOROLA INC·Filed 1999·Granted Sep 25, 2001·17 cites·12 claims
- 1955US4724392ASystem for testing magnetic head/disk interfacesIBM·Filed 1986·Granted Feb 9, 1988·10 cites·10 claims
- 2048US6898129B2Erase of a memory having a non-conductive storage mediumFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 24, 2005·5 cites·23 claims
- 2145US7955877B2Method for simulating long-term performance of a non-volatile memory by exposing the non-volatile memory to heavy-ion radiationFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Jun 7, 2011·1 cites·17 claims
- 2237US7160775B2Method of discharging a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 9, 2007·0 cites·11 claims
- 2336US2006076604A1Virtual ground memory array and method thereforPRINZ ERWIN J·Filed 2004·Application pending·0 cites
- 2435US2017053930A1Semiconductor device having a metal oxide metal (mom) capacitor and a plurality of series capacitors and method for formingFREESCALE SEMICONDUCTOR INC·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Erwin J. Prinz files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →