Inventor · disambiguated record
Atsushi Itsuki
Also filed as: ITSUKI ATSUSHI
10 granted patents·5 pending applications·103 citations·filing 1995–2022
88Inventor score
Top patents by PatentIndex Score
15 records- 0175US5696384AComposition for formation of electrode patternMITSUBISHI MATERIALS CORP·Filed 1995·Granted Dec 9, 1997·46 cites·2 claims
- 0271US7196211B2Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the sameMITSUBISHI MATERIALS CORP·Filed 2004·Granted Mar 27, 2007·7 cites·20 claims
- 0370US6310228B1Organic copper compound, liquid mixture containing the compound, and copper thin-film prepared using the solutionMITSUBISHI MATERIALS CORP·Filed 2000·Granted Oct 30, 2001·6 cites·62 claims
- 0462US7148367B2Organometallic compound, its synthesis method, and solution raw material and metal-containing thin film containing the sameMITSUBISHI MATERIALS CORP·Filed 2004·Granted Dec 12, 2006·3 cites·33 claims
- 0561US6355097B2Organic titanium compound suitable for MOCVDMITSUBISHI MATERIALS CORP·Filed 2001·Granted Mar 12, 2002·3 cites·5 claims
- 0659US5767302AHigh-purity TI complexes, methods for producing the same and BST film-forming liquid compositionsMITSUBISHI MATERIALS CORP·Filed 1996·Granted Jun 16, 1998·24 cites·20 claims
- 0754US2024318310A1Container for volatile raw materials, and solid gasification and supply systemKOJUNDO CHEMICAL LABORATORY CO LTD·Filed 2022·Application pending·0 cites
- 0851US11566326B2Vaporizable source material container and solid vaporization/supply system using the sameKOJUNDO CHEMICAL LABORATORY CO LTD·Filed 2020·Granted Jan 31, 2023·0 cites·9 claims
- 0944US11613809B2Solid vaporization/supply system of metal halide for thin film depositionKOJUNDO CHEMICAL LABORATORY CO LTD·Filed 2020·Granted Mar 28, 2023·0 cites·7 claims
- 1041US6280518B1Organic titanium compound suitable for MOCVDMITSUBISHI MATERIALS CORP·Filed 1999·Granted Aug 28, 2001·9 cites·9 claims
- 1137US2004203255A1Method of forming Si-containing thin filmMITSUBISHI MATERIALS CORP·Filed 2004·Application pending·0 cites
- 1237US2008072792A1Raw Material Solution for Metal Organic Chemical Vapor Deposition and Composite Oxide-Based Dielectric Thin Film Produced by Using the Raw MaterialMITSUBISHI MATERIALS CORP·Filed 2005·Application pending·0 cites
- 1337US2007231251A1Capacitor Film Forming MaterialMITSUBISHI MATERIALS CORP·Filed 2005·Application pending·0 cites
- 1436US2008299312A1Raw Material Solution for Metal Organic Chemical Vapor Deposition Method and Method for Manufacturing Composite Oxide Film Containing Hf-Si Using the Raw Material SolutionITSUKI ATSUSHI·Filed 2005·Application pending·0 cites
- 1534US6485554B1Solution raw material for forming composite oxide type dielectric thin film and dielectric thin filmMITSUBISHI MATERIALS CORP·Filed 1998·Granted Nov 26, 2002·5 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →