Inventor · disambiguated record
Jengping Lin
Also filed as: LIN JENGPING
15 granted patents·449 citations·filing 1995–2000
94Inventor score
Top patents by PatentIndex Score
15 records- 0188US5502009AMethod for fabricating gate oxide layers of different thicknessesUNITED MICROELECTRONICS CORP·Filed 1995·Granted Mar 26, 1996·116 cites·15 claims
- 0284US5510279AMethod of fabricating an asymmetric lightly doped drain transistor deviceUNITED MICROELECTRONICS CORP·Filed 1995·Granted Apr 23, 1996·75 cites·9 claims
- 0377US5663586AFet device with double spacerUNITED MICROELECTRONICS CORP·Filed 1996·Granted Sep 2, 1997·44 cites·7 claims
- 0473US5550079AMethod for fabricating silicide shunt of dual-gate CMOS deviceTOP TEAM MICROELECTRONICS CORP·Filed 1995·Granted Aug 27, 1996·52 cites·25 claims
- 0571US5504038AMethod for selective tungsten sidewall and bottom contact formationUNITED MICROELECTRONICS CORP·Filed 1995·Granted Apr 2, 1996·42 cites·18 claims
- 0669US5641698AMethod of fabricating FET device with double spacerUNITED MICROELECTRONICS CORP·Filed 1996·Granted Jun 24, 1997·30 cites·4 claims
- 0753US5547900AMethod of fabricating a self-aligned contact using a liquid-phase oxide-deposition processUNITED MICROELECTRONICS CORP·Filed 1995·Granted Aug 20, 1996·19 cites·7 claims
- 0852US5612239AUse of oxide spacers formed by liquid phase depositionUNITED MICROELECTRONICS CORP·Filed 1995·Granted Mar 18, 1997·18 cites·17 claims
- 0951US5679602AMethod of forming MOSFET devices with heavily doped local channel stopsUNITED MICROELECTRONICS CORP·Filed 1996·Granted Oct 21, 1997·17 cites·19 claims
- 1048US6215546B1Method of optical correction for improving the pattern shrinkage caused by scattering of the lightNANYA TECHNOLOGY CORP·Filed 2000·Granted Apr 10, 2001·4 cites·6 claims
- 1148US6107175AMethod of fabricating self-aligned contactUNITED MICROELECTRONICS CORP·Filed 1998·Granted Aug 22, 2000·12 cites·22 claims
- 1238US5550074AProcess for fabricating MOS transistors having anti-punchthrough implant regions formed by the use of a phase-shift maskUNITED MICROELECTRONICS CORP·Filed 1996·Granted Aug 27, 1996·7 cites·6 claims
- 1337US5652160AMethod of fabricating a buried contact structure with WSix sidewall spacersUNITED MICROELECTRONICS CORP·Filed 1996·Granted Jul 29, 1997·5 cites·9 claims
- 1434US6303491B1Method for fabricating self-aligned contact holeNANYA TECHNOLOGY CORP·Filed 1999·Granted Oct 16, 2001·5 cites·15 claims
- 1530US5966604AMethod of manufacturing MOS components having lightly doped drain structuresUNITED MICROELECTRONICS CORP·Filed 1997·Granted Oct 12, 1999·3 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →