Inventor · disambiguated record
Eiichi Asayama
Also filed as: ASAYAMA EIICHI
7 granted patents·2 pending applications·107 citations·filing 2000–2004
86Inventor score
Technology areasC30B
Top patents by PatentIndex Score
9 records- 0185US6641888B2Silicon single crystal, silicon wafer, and epitaxial wafer.SUMITOMO MITSUBISHI SILICON·Filed 2002·Granted Nov 4, 2003·29 cites·12 claims
- 0284US6569237B2Method of pulling up silicon single crystal and method of manufacturing epitaxial waferSUMITOMO MITSUBISHI SILICON·Filed 2001·Granted May 27, 2003·22 cites·12 claims
- 0383US6878451B2Silicon single crystal, silicon wafer, and epitaxial waferSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Apr 12, 2005·15 cites·3 claims
- 0482US6365461B1Method of manufacturing epitaxial waferSUMITOMO METAL IND·Filed 2000·Granted Apr 2, 2002·19 cites·20 claims
- 0571US6709957B2Method of producing epitaxial wafersSUMITOMO MITSUBISHI SILICON·Filed 2002·Granted Mar 23, 2004·9 cites·10 claims
- 0669US6835245B2Method of manufacturing epitaxial wafer and method of producing single crystal as material thereforSUMITOMO MITSUBISHI SILICON·Filed 2001·Granted Dec 28, 2004·8 cites·5 claims
- 0763US7014704B2Method for growing silicon single crystalSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Mar 21, 2006·5 cites·3 claims
- 0846US2004216659A1Method of making an epitaxial waferASAYAMA EIICHI·Filed 2004·Application pending·0 cites
- 0941US2002142170A1Silicon single crystal, silicon wafer, and epitaxial waferSUMITOMO METAL IND·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →