Inventor · disambiguated record
Cheng-Yen Liu
Also filed as: LIU CHENG · LIU CHENG-YEN
7 granted patents·9 pending applications·14 citations·filing 2007–2025
76Inventor score
Files withHUNAN SAN’AN SEMICONDUCTOR CO LTD3TDK CORP3XIAMEN SANAN INTEGRATED CIRCUIT CO LTD3HUNAN SANAN SEMICONDUCTOR CO LTD2AUTOX INC1
Top patents by PatentIndex Score
16 records- 0195US11746001B2Microelectromechanical microphone with membrane trench reinforcements and method of fabricationTDK ELECTRONICS AG·Filed 2021·Granted Sep 5, 2023·3 cites·18 claims
- 0294US11388496B2Microelectromechanical microphone having a stoppage memberTDK CORP·Filed 2021·Granted Jul 12, 2022·5 cites·22 claims
- 0373US12012326B2Microelectromechanical microphone with membrane trench reinforcements and method of fabricationTDK CORP·Filed 2023·Granted Jun 18, 2024·0 cites·10 claims
- 0471US7666702B2Method for fabricating a microstructureMEMSMART SEMICONDUCTOR CORP·Filed 2007·Granted Feb 23, 2010·6 cites·7 claims
- 0558US2024230400A9Microelectromechanical acoustic sensor with membrane etch release structures and method of fabricationINVENSENSE INC·Filed 2023·Application pending·0 cites
- 0657US2025113466A1Vehicle thermal management system and autonomous vehiclesAUTOX INC·Filed 2024·Application pending·0 cites
- 0756US2023361056A1Semiconductor device and method of making the same and seal ring structureHUNAN SAN’AN SEMICONDUCTOR CO LTD·Filed 2023·Application pending·0 cites
- 0855US12269734B2Microelectromechanical microphone with membrane trench reinforcements and method of fabricationTDK CORP·Filed 2022·Granted Apr 8, 2025·0 cites·11 claims
- 0955US2024258385A1Gallium nitride bidirectional switch deviceHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2024·Application pending·0 cites
- 1053US2023299128A1Lateral field-effect transistor and preparing methodHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2023·Application pending·0 cites
- 1152US2025221016A1Integrated device and preparation method thereofHUNAN SAN’AN SEMICONDUCTOR CO LTD·Filed 2024·Application pending·0 cites
- 1251US11862680B2Electrostatic discharge protection structure, nitride-based device having the same and method for manufacturing nitride-based deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·15 claims
- 1348US2025311368A1Power device and manufacturing method thereofHUNAN SAN’AN SEMICONDUCTOR CO LTD·Filed 2025·Application pending·0 cites
- 1447US12453183B2Semiconductor device with low potential terminals connected to wellsXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·12 claims
- 1534US2019140046A1Silicon carbide power device employing heterojunction terminal and manufacturing method thereofXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2018·Application pending·0 cites
- 1633US2019158755A1Aerial vehicle and target object tracking methodCHIUN MAI COMMUNICATION SYSTEMS INC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →