Inventor · disambiguated record
Toshinobu Matsuno
Also filed as: MATSUNO TOSHINOBU
22 granted patents·4 pending applications·228 citations·filing 1991–2017
95Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD12PANASONIC CORP8PANASONIC IP MAN CO LTD3MATSUSHITA ELECTRONICS CORP2
Top patents by PatentIndex Score
26 records- 0192US7663084B2Solid-state imager and solid-state imaging apparatus having a modulated effective refractive index distribution and manufacturing method thereofPANASONIC CORP·Filed 2008·Granted Feb 16, 2010·15 cites·15 claims
- 0291US7692129B2Solid-state imaging device with light-collecting device having sub-wavelength periodic structure, solid-state imaging apparatus and manufacturing method thereofPANASONIC CORP·Filed 2006·Granted Apr 6, 2010·14 cites·26 claims
- 0390US8354693B2Solid state imaging device and method for fabricating the samePANASONIC CORP·Filed 2008·Granted Jan 15, 2013·13 cites·18 claims
- 0486US9601532B2Optical filter with Fabry-Perot resonator comprising a plate-shaped wire grid polarizerPANASONIC IP MAN CO LTD·Filed 2015·Granted Mar 21, 2017·5 cites·16 claims
- 0579US9392231B2Imaging device and endoscope for detecting and displaying the shape of the micro-geometric texture of a transparent structurePANASONIC CORP·Filed 2013·Granted Jul 12, 2016·4 cites·25 claims
- 0678US6653714B2Lateral bipolar transistorMATSUSHITA ELECTRONICS CORP·Filed 2002·Granted Nov 25, 2003·20 cites·7 claims
- 0773US7846620B2Phase shift mask and method for manufacturing light-collecting devicePANASONIC CORP·Filed 2007·Granted Dec 7, 2010·3 cites·8 claims
- 0871US6051454ASemiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Apr 18, 2000·34 cites·6 claims
- 0970US5371389AHeterojunction bipolar transistor with base layer having graded bandgapMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Dec 6, 1994·26 cites·1 claims
- 1068US6593193B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jul 15, 2003·12 cites·18 claims
- 1164US5429957AMethod of manufacturing an heterojunction bipolar transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Jul 4, 1995·20 cites·1 claims
- 1263US7285806B2Semiconductor device having an active region formed from group III nitrideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Oct 23, 2007·10 cites·6 claims
- 1359US7768711B2Manufacturing method of light-collecting device, light-collecting device and phase shift maskPANASONIC CORP·Filed 2006·Granted Aug 3, 2010·2 cites·10 claims
- 1459US7585706B2Method of fabricating a semiconductor devicePANASONIC CORP·Filed 2007·Granted Sep 8, 2009·1 cites·16 claims
- 1555US6153499AMethod of manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Nov 28, 2000·20 cites·12 claims
- 1654US6503808B1Lateral bipolar transistor and method for producing the sameMATSUSHITA ELECTRONICS CORP·Filed 2000·Granted Jan 7, 2003·5 cites·11 claims
- 1754US2009250594A1Solid-state image sensor and manufacturing method thereofPANASONIC CORP·Filed 2009·Application pending·0 cites
- 1847US5205900AMethod of monitoring surface roughness of crystal, and crystal growth equipmentMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Apr 27, 1993·8 cites·3 claims
- 1944US2019170713A1Thin layer chromatography plate and sample analysis method using samePANASONIC IP MAN CO LTD·Filed 2017·Application pending·0 cites
- 2043US7307292B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 11, 2007·1 cites·10 claims
- 2143US6323538B1Bipolar transistor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Nov 27, 2001·1 cites·4 claims
- 2241US5289020AHeterojunction bipolar transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Feb 22, 1994·8 cites·8 claims
- 2341US2017198833A1Micro check valve apparatusPANASONIC IP MAN CO LTD·Filed 2017·Application pending·0 cites
- 2437US2002022330A1Bipolar transistor and method for fabricating the sameFiled 2001·Application pending·0 cites
- 2533US5751030AField effect transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted May 12, 1998·2 cites·13 claims
- 2631US5486705AHeterojunction field effect transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Jan 23, 1996·4 cites·26 claims
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