Inventor · disambiguated record
Sameer Pradhan
Also filed as: PRADHAN SAMEER · PRADHAN SAMEER S
29 granted patents·3 pending applications·189 citations·filing 2006–2022
96Inventor score
Files withINTEL CORP15MIE FUJITSU SEMICONDUCTOR LTD7CORNELL RES FOUNDATION INC2PRADHAN SAMEER S2SUVOLTA INC2
Top patents by PatentIndex Score
32 records- 0197US7751654B2Electro-optic modulationCORNELL RES FOUNDATION INC·Filed 2006·Granted Jul 6, 2010·76 cites·14 claims
- 0295US9299801B1Method for fabricating a transistor device with a tuned dopant profileMIE FUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Mar 29, 2016·21 cites·14 claims
- 0393US9112057B1Semiconductor devices with dopant migration suppression and method of fabrication thereofMIE FUJITSU SEMICONDUCTOR LTD·Filed 2012·Granted Aug 18, 2015·17 cites·19 claims
- 0490US8981435B2Source/drain contacts for non-planar transistorsPRADHAN SAMEER S·Filed 2011·Granted Mar 17, 2015·9 cites·15 claims
- 0589US9425316B2Source/drain contacts for non-planar transistorsINTEL CORP·Filed 2015·Granted Aug 23, 2016·4 cites·19 claims
- 0689US9196727B2High uniformity screen and epitaxial layers for CMOS devicesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Nov 24, 2015·8 cites·7 claims
- 0788US8877619B1Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefromSUVOLTA INC·Filed 2013·Granted Nov 4, 2014·12 cites·5 claims
- 0886US9853156B2Source/drain contacts for non-planar transistorsINTEL CORP·Filed 2015·Granted Dec 26, 2017·3 cites·16 claims
- 0983US9368624B2Method for fabricating a transistor with reduced junction leakage currentMIE FUJITSU SEMICONDUCTOR LTD·Filed 2015·Granted Jun 14, 2016·3 cites·1 claims
- 1083US8883600B1Transistor having reduced junction leakage and methods of forming thereofTHOMPSON SCOTT E·Filed 2012·Granted Nov 11, 2014·5 cites·13 claims
- 1182US2023028568A1Source/drain contacts for non-planar transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 1281US9577041B2Method for fabricating a transistor device with a tuned dopant profileMIE FUJITSU SEMICONDUCTOR LTD·Filed 2016·Granted Feb 21, 2017·2 cites·4 claims
- 1381US9177867B2Tungsten gates for non-planar transistorsPRADHAN SAMEER S·Filed 2011·Granted Nov 3, 2015·7 cites·25 claims
- 1481US9041126B2Deeply depleted MOS transistors having a screening layer and methods thereofSUVOLTA INC·Filed 2013·Granted May 26, 2015·6 cites·19 claims
- 1578US9202699B2Capping dielectric structure for transistor gatesROSENBAUM AARON W·Filed 2011·Granted Dec 1, 2015·9 cites·11 claims
- 1676US8637955B1Semiconductor structure with reduced junction leakage and method of fabrication thereofWANG LINGQUAN·Filed 2012·Granted Jan 28, 2014·5 cites·20 claims
- 1775US10056488B2Interlayer dielectric for non-planar transistorsINTEL CORP·Filed 2017·Granted Aug 21, 2018·1 cites·11 claims
- 1873US10998445B2Interlayer dielectric for non-planar transistorsINTEL CORP·Filed 2020·Granted May 4, 2021·0 cites·20 claims
- 1972US2020357916A1Source/drain contacts for non-planar transistorsINTEL CORP·Filed 2020·Application pending·0 cites
- 2066US10770591B2Source/drain contacts for non-planar transistorsINTEL CORP·Filed 2019·Granted Sep 8, 2020·0 cites·20 claims
- 2163US10693006B2Interlayer dielectric for non-planar transistorsINTEL CORP·Filed 2018·Granted Jun 23, 2020·0 cites·20 claims
- 2263US9087915B2Interlayer dielectric for non-planar transistorsPRADHAN SAMEER·Filed 2011·Granted Jul 21, 2015·1 cites·20 claims
- 2362US10283640B2Source/drain contacts for non-planar transistorsINTEL CORP·Filed 2017·Granted May 7, 2019·0 cites·16 claims
- 2457US10020375B2Tungsten gates for non-planar transistorsINTEL CORP·Filed 2017·Granted Jul 10, 2018·0 cites·20 claims
- 2557US9893148B2Method for fabricating a transistor device with a tuned dopant profileMIE FUJITSU SEMICONDUCTOR LTD·Filed 2016·Granted Feb 13, 2018·0 cites·3 claims
- 2656US9812546B2Tungsten gates for non-planar transistorsINTEL CORP·Filed 2017·Granted Nov 7, 2017·0 cites·12 claims
- 2756US9634124B2Interlayer dielectric for non-planar transistorsINTEL CORP·Filed 2015·Granted Apr 25, 2017·0 cites·10 claims
- 2854US9637810B2Tungsten gates for non-planar transistorsINTEL CORP·Filed 2015·Granted May 2, 2017·0 cites·8 claims
- 2954US9580776B2Tungsten gates for non-planar transistorsINTEL CORP·Filed 2015·Granted Feb 28, 2017·0 cites·10 claims
- 3054US9105711B2Semiconductor structure with reduced junction leakage and method of fabrication thereofMIE FUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Aug 11, 2015·0 cites·18 claims
- 3151US2010266232A1Electro-optic modulationCORNELL RES FOUNDATION INC·Filed 2010·Application pending·0 cites
- 3245US9490347B2Capping dielectric structures for transistor gatesINTEL CORP·Filed 2015·Granted Nov 8, 2016·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →