Inventor · disambiguated record
Edwin L. Piner
Also filed as: PINER EDWIN L · PINER EDWIN LANIER
35 granted patents·8 pending applications·1,407 citations·filing 2000–2024
98Inventor score
Files withNITRONEX CORP16INT RECTIFIER CORP10INFINEON TECHNOLOGIES AMERICAS CORP5MACOM TECH SOLUTIONS HOLDINGS INC2PINER EDWIN L2
Top patents by PatentIndex Score
43 records- 0199US6649287B2Gallium nitride materials and methodsNITRONEX CORP·Filed 2000·Granted Nov 18, 2003·248 cites·70 claims
- 0299US6617060B2Gallium nitride materials and methodsNITRONEX CORP·Filed 2002·Granted Sep 9, 2003·317 cites·75 claims
- 0398US9064775B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2014·Granted Jun 23, 2015·29 cites·20 claims
- 0497US8592862B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2012·Granted Nov 26, 2013·18 cites·20 claims
- 0597US8344417B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2012·Granted Jan 1, 2013·16 cites·20 claims
- 0697US7365374B2Gallium nitride material structures including substrates and methods associated with the sameNITRONEX CORP·Filed 2005·Granted Apr 29, 2008·52 cites·19 claims
- 0797US7361946B2Semiconductor device-based sensorsNITRONEX CORP·Filed 2004·Granted Apr 22, 2008·116 cites·15 claims
- 0897US6611002B2Gallium nitride material devices and methods including backside viasNITRONEX CORP·Filed 2001·Granted Aug 26, 2003·176 cites·51 claims
- 0996US8937335B2Gallium nitride devices with aluminum nitride intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 20, 2015·12 cites·20 claims
- 1096US8928034B2Gallium nitride devices with aluminum nitride alloy intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 6, 2015·11 cites·20 claims
- 1195US8928035B2Gallium nitride devices with gallium nitride alloy intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 6, 2015·9 cites·20 claims
- 1295US6727531B1Indium gallium nitride channel high electron mobility transistors, and method of making the sameADVANCED TECH MATERIALS·Filed 2000·Granted Apr 27, 2004·99 cites·6 claims
- 1394US10177229B2Semiconductor material having a compositionally-graded transition layerINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Jan 8, 2019·5 cites·19 claims
- 1494US9437687B2III-nitride based semiconductor structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Sep 6, 2016·5 cites·20 claims
- 1593US8105921B2Gallium nitride materials and methodsWEEKS JR T WARREN·Filed 2008·Granted Jan 31, 2012·18 cites·15 claims
- 1693US7352016B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2006·Granted Apr 1, 2008·23 cites·19 claims
- 1793US7352015B2Gallium nitride materials and methods associated with the sameNITRONEX CORP·Filed 2005·Granted Apr 1, 2008·17 cites·47 claims
- 1893US7247889B2III-nitride material structures including silicon substratesNITRONEX CORP·Filed 2004·Granted Jul 24, 2007·83 cites·32 claims
- 1992US7791106B2Gallium nitride material structures including substrates and methods associated with the sameNITRONEX CORP·Filed 2008·Granted Sep 7, 2010·17 cites·12 claims
- 2092US7339205B2Gallium nitride materials and methods associated with the sameNITRONEX CORP·Filed 2004·Granted Mar 4, 2008·43 cites·29 claims
- 2191US9461119B2Semiconductor structure with compositionally-graded transition layerINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Oct 4, 2016·4 cites·17 claims
- 2291US9437686B2Gallium nitride devices with discontinuously graded transition layerINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Sep 6, 2016·4 cites·17 claims
- 2391US7135720B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2004·Granted Nov 14, 2006·50 cites·81 claims
- 2481US7687827B2III-nitride materials including low dislocation densities and methods associated with the sameNITRONEX CORP·Filed 2004·Granted Mar 30, 2010·21 cites·37 claims
- 2575US2025079188A1Incorporating semiconductors on a polycrystalline diamond substrateTEXAS STATE UNIV·Filed 2024·Application pending·0 cites
- 2673US12176221B2Incorporating semiconductors on a polycrystalline diamond substrateTEXAS STATE UNIV·Filed 2019·Granted Dec 24, 2024·1 cites·10 claims
- 2771US7569871B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2008·Granted Aug 4, 2009·3 cites·20 claims
- 2871US2020243651A9Gallium nitride materials and methodsMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2018·Application pending·0 cites
- 2971US2019214468A1Gallium nitride materials and methodsMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2018·Application pending·0 cites
- 3070USRE44538EIndium gallium nitride channel high electron mobility transistors, and method of making the sameREDWING JOAN M·Filed 2005·Granted Oct 15, 2013·5 cites·18 claims
- 3168US8748298B2Gallium nitride materials and methods associated with the samePINER EDWIN L·Filed 2008·Granted Jun 10, 2014·2 cites·15 claims
- 3264US2016126315A1III-Nitride Semiconductor Structure with Intermediate and Transition LayersINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Application pending·0 cites
- 3363US8343824B2Gallium nitride material processing and related device structuresINT RECTIFIER CORP·Filed 2008·Granted Jan 1, 2013·1 cites·27 claims
- 3461US7994540B2Gallium nitride material transistors and methods associated with the sameINT RECTIFIER CORP·Filed 2009·Granted Aug 9, 2011·1 cites·20 claims
- 3558US8026581B2Gallium nitride material devices including diamond regions and methods associated with the sameINT RECTIFIER CORP·Filed 2008·Granted Sep 27, 2011·1 cites·3 claims
- 3657US10903076B2Material selective regrowth structure and methodThe Texas State University—San Marcos·Filed 2019·Granted Jan 26, 2021·0 cites·11 claims
- 3756US2008185616A1Semiconductor device-based sensors and methods associated with the sameNITRONEX CORP·Filed 2008·Application pending·0 cites
- 3854US10096701B2Gallium nitride materials and methods associated with the samePINER EDWIN L·Filed 2008·Granted Oct 9, 2018·0 cites·18 claims
- 3951US10504725B2Material selective regrowth structure and methodTHE TEXAS STATE UNIV SAN MARCOS·Filed 2016·Granted Dec 10, 2019·0 cites·11 claims
- 4050US8368117B2III-nitride materials including low dislocation densities and methods associated with the sameINT RECTIFIER CORP·Filed 2010·Granted Feb 5, 2013·0 cites·6 claims
- 4146US2004119067A1Gallium nitride materials and methodsNITRONEX CORP·Filed 2003·Application pending·0 cites
- 4236US2005145851A1Gallium nitride material structures including isolation regions and methodsNITRONEX CORP·Filed 2004·Application pending·0 cites
- 4336US2003132433A1Semiconductor structures including a gallium nitride material component and a silicon germanium componentFiled 2002·Application pending·0 cites
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