Inventor · disambiguated record
Shibing Long
Also filed as: LONG SHIBING
20 granted patents·5 pending applications·17 citations·filing 2011–2025
89Inventor score
Files withINST OF MICROELECTRONICS CAS14THE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES3UNIV SCIENCE & TECHNOLOGY CHINA3LIU MING2HUO ZONGLIANG1
Top patents by PatentIndex Score
25 records- 0176US11189345B2Method for implementing logic calculation based on a crossbar array structure of resistive switching deviceINST OF MICROELECTRONICS CAS·Filed 2018·Granted Nov 30, 2021·4 cites·15 claims
- 0272US10608177B2Self-gated RRAM cell and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2014·Granted Mar 31, 2020·2 cites·12 claims
- 0370US8705274B2Three-dimensional multi-bit non-volatile memory and method for manufacturing the sameLIU MING·Filed 2011·Granted Apr 22, 2014·3 cites·21 claims
- 0469US11245074B2Resistance random access memory and method for fabricating the sameINST OF MICROELECTRONICS CAS·Filed 2017·Granted Feb 8, 2022·1 cites·10 claims
- 0567US8642989B2Resistive random access memory cell and memoryLIU QI·Filed 2011·Granted Feb 4, 2014·4 cites·15 claims
- 0655US8665631B2Resistive random memory cell and memoryHUO ZONGLIANG·Filed 2011·Granted Mar 4, 2014·1 cites·11 claims
- 0754US10297748B2Three-terminal atomic switching device and method of manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2014·Granted May 21, 2019·0 cites·22 claims
- 0854US9508776B2Gating device cell for cross array of bipolar resistive memory cellsINST OF MICROELECTRONICS CAS·Filed 2013·Granted Nov 29, 2016·1 cites·17 claims
- 0953US2025275152A1Ferroelectric capacitor resisting fatigue, ferroelectric storage circuit, and ferroelectric memory thereofUNIV SCIENCE & TECHNOLOGY CHINA·Filed 2025·Application pending·0 cites
- 1052US2024079478A1Preparation method of gallium oxide device based on high-temperature annealing technology and gallium oxide deviceUNIV SCIENCE & TECHNOLOGY CHINA·Filed 2023·Application pending·0 cites
- 1152US2024079477A1Vertical gallium oxide transistor and preparation method thereofUNIV SCIENCE & TECHNOLOGY CHINA·Filed 2023·Application pending·0 cites
- 1251US8735245B2Metal oxide resistive switching memory and method for manufacturing sameLV HANGBING·Filed 2011·Granted May 27, 2014·1 cites·19 claims
- 1348US12423564B2Neuron circuit and neural network circuitINST OF MICROELECTRONICS CAS·Filed 2018·Granted Sep 23, 2025·0 cites·20 claims
- 1446US11223013B2Conductive bridge semiconductor component and manufacturing method thereforINST OF MICROELECTRONICS CAS·Filed 2017·Granted Jan 11, 2022·0 cites·15 claims
- 1545US10418549B2Method for evaluating thermal effect and reducing thermal crosstalk of three-dimensional integrated resistive switching memoryINST OF MICROELECTRONICS CAS·Filed 2016·Granted Sep 17, 2019·0 cites·7 claims
- 1640US10700276B2Preparation method of Cu-based resistive random access memory, and memoryTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2016·Granted Jun 30, 2020·0 cites·9 claims
- 1739US10305035B2Preparation method of Cu-based resistive random access memoryTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2016·Granted May 28, 2019·0 cites·13 claims
- 1838US10134983B2Nonvolatile resistive switching memory device and manufacturing method thereofINST OF MICROELECTRONICS CAS·Filed 2015·Granted Nov 20, 2018·0 cites·16 claims
- 1938US9779836B2Method for controlling magnetic multi-domain stateINST OF MICROELECTRONICS CAS·Filed 2014·Granted Oct 3, 2017·0 cites·13 claims
- 2038US2020058704A1Selector based on transition metal oxide and preparation method thereforINST OF MICROELECTRONICS CAS·Filed 2017·Application pending·0 cites
- 2137US10665780B2Selection device for use in bipolar resistive memory and manufacturing method thereforINST OF MICROELECTRONICS CAS·Filed 2016·Granted May 26, 2020·0 cites·8 claims
- 2237US8531861B2One time programming memory and method of storage and manufacture of the sameLIU MING·Filed 2011·Granted Sep 10, 2013·0 cites·13 claims
- 2334US2019006584A1Method for improving endurance performance of 3d integrated resistive switching memoryINST OF MICROELECTRONICS CAS·Filed 2016·Application pending·0 cites
- 2433US10312439B2Manufacturing method for a nonvolatile resistive switching memory deviceINST OF MICROELECTRONICS CAS·Filed 2015·Granted Jun 4, 2019·0 cites·6 claims
- 2532US10720578B2Self-gating resistive storage device having resistance transition layer in vertical trench in stacked structure of insulating dielectric layers and electrodesTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2016·Granted Jul 21, 2020·0 cites·6 claims
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