Inventor · disambiguated record
Etsuo Morita
Also filed as: MORITA ETSUO
20 granted patents·3 pending applications·1,298 citations·filing 1993–2014
97Inventor score
Top patents by PatentIndex Score
23 records- 0199US6967353B2Semiconductor light emitting device and fabrication method thereofSONY CORP·Filed 2003·Granted Nov 22, 2005·480 cites·11 claims
- 0297US7125736B2Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrateSONY CORP·Filed 2005·Granted Oct 24, 2006·44 cites·6 claims
- 0395US6727523B2Method of manufacturing crystal of iii-v compounds of the nitride system, crystal substrate of iii-v compounds of the nitride system, crystal film of iii-v compounds of the nitride system, and method of manufacturing deviceSONY CORP·Filed 2002·Granted Apr 27, 2004·85 cites·4 claims
- 0493US7033854B2Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrateSONY CORP·Filed 2001·Granted Apr 25, 2006·50 cites·12 claims
- 0593US6232623B1Semiconductor device on a sapphire substrateSONY CORP·Filed 1999·Granted May 15, 2001·107 cites·11 claims
- 0689US6501154B2Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structureSONY CORP·Filed 1998·Granted Dec 31, 2002·79 cites·8 claims
- 0789US6498048B2Method of manufacturing crystal of iii-v compounds of the nitride system, crystal substrate of iii-v compounds of the nitride system, crystal film of iii-v compounds of the nitride system, and method of manufacturing deviceSONY CORP·Filed 2000·Granted Dec 24, 2002·40 cites·11 claims
- 0889US6121636ASemiconductor light emitting deviceSONY CORP·Filed 1998·Granted Sep 19, 2000·110 cites·18 claims
- 0987US7727331B2Crystal firm, crystal substrate, and semiconductor deviceSONY CORP·Filed 2007·Granted Jun 1, 2010·8 cites·19 claims
- 1085US7364805B2Crystal film, crystal substrate, and semiconductor deviceSONY CORP·Filed 2002·Granted Apr 29, 2008·22 cites·14 claims
- 1185US5705421AA SOI substrate fabricating methodSONY CORP·Filed 1995·Granted Jan 6, 1998·109 cites·20 claims
- 1279US6107162AMethod for manufacture of cleaved light emitting semiconductor deviceSONY CORP·Filed 1998·Granted Aug 22, 2000·40 cites·11 claims
- 1376US5821568ACleaved semiconductor device with {11-20} planeSONY CORP·Filed 1996·Granted Oct 13, 1998·36 cites·8 claims
- 1471US5753966ASemiconductor device with cleaved surfaceSONY CORP·Filed 1996·Granted May 19, 1998·34 cites·8 claims
- 1565US7244308B2Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing deviceSONY CORP·Filed 2000·Granted Jul 17, 2007·9 cites·22 claims
- 1661US8741451B2Crystal film, crystal substrate, and semiconductor deviceMORITA ETSUO·Filed 2007·Granted Jun 3, 2014·1 cites·12 claims
- 1758US5418374ASemiconductor device having an active layer with regions with different bandgapsSONY CORP·Filed 1993·Granted May 23, 1995·18 cites·14 claims
- 1858US2014235037A1Crystal film, crystal substrate, and semiconductor deviceSONY CORP·Filed 2014·Application pending·0 cites
- 1954US7294201B2Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing deviceSONY CORP·Filed 2000·Granted Nov 13, 2007·4 cites·17 claims
- 2051US5665977ASemiconductor light emitting device with defect decomposing and blocking layersSONY CORP·Filed 1996·Granted Sep 9, 1997·14 cites·6 claims
- 2142US5828086ASemiconductor light emitting device with a Mg superlattice structureSONY CORP·Filed 1997·Granted Oct 27, 1998·8 cites·6 claims
- 2237US2002146856A1Electrode, semiconductor device and methods for making themFiled 2002·Application pending·0 cites
- 2330US2002081800A1Electrode, semiconductor device and methods for making themFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →