Inventor · disambiguated record
Jayasimha Prasad
Also filed as: PRASAD JAYASIMHA · PRASAD JAYASIMHA S · PRASAD JAYASIMHA SWAMY
14 granted patents·3 pending applications·241 citations·filing 1981–2023
92Inventor score
Files withMICREL INC4ZUNIGA MARCO A4NAT SEMICONDUCTOR CORP3INFINEON TECH CANADA INC2GAN SYSTEMS INC1
Top patents by PatentIndex Score
17 records- 0195US8647950B2Vertical gate LDMOS deviceZUNIGA MARCO A·Filed 2012·Granted Feb 11, 2014·17 cites·14 claims
- 0290US8709899B2Vertical gate LDMOS deviceZUNIGA MARCO A·Filed 2012·Granted Apr 29, 2014·7 cites·31 claims
- 0382US6699765B1Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layerMICREL INC·Filed 2002·Granted Mar 2, 2004·30 cites·26 claims
- 0482US4477825AElectrically programmable and erasable memory cellNAT SEMICONDUCTOR CORP·Filed 1981·Granted Oct 16, 1984·37 cites·10 claims
- 0580US5268315AImplant-free heterojunction bioplar transistor integrated circuit processTEKTRONIX INC·Filed 1992·Granted Dec 7, 1993·94 cites·10 claims
- 0673US6329698B1Forming a self-aligned epitaxial base bipolar transistorNAT SEMICONDUCTOR CORP·Filed 1999·Granted Dec 11, 2001·32 cites·9 claims
- 0770US8866217B2Vertical gate LDMOS deviceZUNIGA MARCO A·Filed 2012·Granted Oct 21, 2014·1 cites·16 claims
- 0862US9530880B2DMOS transistor with trench schottky diodeMICREL INC·Filed 2015·Granted Dec 27, 2016·1 cites·10 claims
- 0961US6020246AForming a self-aligned epitaxial base bipolar transistorNAT SEMICONDUCTOR CORP·Filed 1998·Granted Feb 1, 2000·20 cites·18 claims
- 1060US9159804B2Vertical gate LDMOS deviceVolterra Semiconductor LLC·Filed 2014·Granted Oct 13, 2015·0 cites·17 claims
- 1160US8969158B2Vertical gate LDMOS deviceVOLTERRA SEMICONDUCTOR CORP·Filed 2014·Granted Mar 3, 2015·0 cites·16 claims
- 1256US10147801B2Transistor with buried P+ and source contactZUNIGA MARCO A·Filed 2012·Granted Dec 4, 2018·0 cites·18 claims
- 1353US2025176260A1Common drain bidirectional switchINFINEON TECH CANADA INC·Filed 2023·Application pending·0 cites
- 1452US2025133818A1Hybrid enhancement/depletion gate structure for high electron mobility transistorINFINEON TECH CANADA INC·Filed 2023·Application pending·0 cites
- 1550US2024421196A1GaN SEMICONDUCTOR POWER TRANSISTOR WITH SLANTED GATE FIELD PLATE AND METHOD OF FABRICATIONGAN SYSTEMS INC·Filed 2023·Application pending·0 cites
- 1648US9780204B2DMOS transistor with trench schottky diodeMICREL INC·Filed 2016·Granted Oct 3, 2017·0 cites·18 claims
- 1743US6913981B2Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layerMICREL INC·Filed 2003·Granted Jul 5, 2005·2 cites·41 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →