Inventor · disambiguated record
Michael James Paisley
Also filed as: PAISLEY MICHAEL · PAISLEY MICHAEL J · PAISLEY MICHAEL JAMES
19 granted patents·3 pending applications·734 citations·filing 1997–2024
96Inventor score
Top patents by PatentIndex Score
22 records- 0198US11519098B2Dislocation distribution for silicon carbide crystalline materialsWOLFSPEED INC·Filed 2020·Granted Dec 6, 2022·9 cites·46 claims
- 0298US8052794B2Directed reagents to improve material uniformityCREE INC·Filed 2005·Granted Nov 8, 2011·366 cites·32 claims
- 0394US12054850B2Large diameter silicon carbide wafersWOLFSPEED INC·Filed 2020·Granted Aug 6, 2024·5 cites·33 claims
- 0494US6297522B1Highly uniform silicon carbide epitaxial layersCREE INC·Filed 2000·Granted Oct 2, 2001·57 cites·6 claims
- 0591US8430960B2Deposition systems and susceptor assemblies for depositing a film on a substrateSUMAKERIS JOSEPH JOHN·Filed 2006·Granted Apr 30, 2013·14 cites·40 claims
- 0691US6849874B2Minimizing degradation of SiC bipolar semiconductor devicesCREE INC·Filed 2001·Granted Feb 1, 2005·30 cites·42 claims
- 0790US7427326B2Minimizing degradation of SiC bipolar semiconductor devicesCREE INC·Filed 2006·Granted Sep 23, 2008·7 cites·20 claims
- 0887US12125701B2Large dimension silicon carbide single crystalline materials with reduced crystallographic stressWOLFSPEED INC·Filed 2020·Granted Oct 22, 2024·2 cites·10 claims
- 0986US7118781B1Methods for controlling formation of deposits in a deposition system and deposition methods including the sameCREE INC·Filed 2003·Granted Oct 10, 2006·26 cites·40 claims
- 1086US6797069B2Gas driven planetary rotation apparatus and methods for forming silicon carbide layersCREE INC·Filed 2002·Granted Sep 28, 2004·36 cites·27 claims
- 1186US6569250B2Gas-driven rotation apparatus and method for forming silicon carbide layersCREE INC·Filed 2001·Granted May 27, 2003·31 cites·46 claims
- 1285US12473661B2Large diameter silicon carbide wafersWOLFSPEED INC·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 1381US6974720B2Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed therebyCREE INC·Filed 2003·Granted Dec 13, 2005·25 cites·13 claims
- 1481US6063186AGrowth of very uniform silicon carbide epitaxial layersCREE INC·Filed 1997·Granted May 16, 2000·65 cites·27 claims
- 1579US6896738B2Induction heating devices and methods for controllably heating an articleCREE INC·Filed 2001·Granted May 24, 2005·12 cites·29 claims
- 1675US6824611B1Method and apparatus for growing silicon carbide crystalsCREE INC·Filed 1999·Granted Nov 30, 2004·43 cites·22 claims
- 1772US9155131B2Methods for controllably induction heating an articleSUMAKERIS JOSEPH JOHN·Filed 2008·Granted Oct 6, 2015·1 cites·8 claims
- 1871US2025006491A1Large dimension silicon carbide single crystalline materials with reduced crystallographic stressWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 1966US7390367B1Housing assembly for an induction heating device including liner or susceptor coatingCREE INC·Filed 2003·Granted Jun 24, 2008·5 cites·12 claims
- 2059US2012052660A1Directed reagents to improve material uniformitySUMAKERIS JOSEPH JOHN·Filed 2011·Application pending·0 cites
- 2150US7880171B2Minimizing degradation of SiC bipolar semiconductor devicesCREE INC·Filed 2004·Granted Feb 1, 2011·0 cites·27 claims
- 2232US2005120943A1Method and apparatus for growing silicon carbide crystalsFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →