Inventor · disambiguated record
Fu-Yen Jian
Also filed as: JIAN FU-YEN
11 granted patents·2 pending applications·18 citations·filing 2008–2017
84Inventor score
Top patents by PatentIndex Score
13 records- 0187US9847478B2Methods and apparatus for resistive random access memory (RRAM)CHANG TING-CHANG·Filed 2012·Granted Dec 19, 2017·6 cites·20 claims
- 0264US8427879B2Method for enabling a SONOS transistor to be used as both a switch and a memoryCHANG TING-CHANG·Filed 2009·Granted Apr 23, 2013·3 cites·8 claims
- 0360US8592794B2Resistance random access memory element and method for making the sameCHANG TING-CHANG·Filed 2011·Granted Nov 26, 2013·1 cites·6 claims
- 0460US7835192B2Method for programming a nonvolatile memoryACER INC·Filed 2008·Granted Nov 16, 2010·1 cites·12 claims
- 0559US7983092B2Nonvolatile memory apparatus and method of using thin film transistor as nonvolatile memoryACER INC·Filed 2009·Granted Jul 19, 2011·4 cites·15 claims
- 0657US10283702B2Methods for resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·0 cites·20 claims
- 0757US9159916B2Resistive random access memory, controlling method and manufacturing method thereforIND TECH RES INST·Filed 2012·Granted Oct 13, 2015·2 cites·16 claims
- 0855US8891299B2MOSFET having memory characteristicsCHANG TING-CHANG·Filed 2012·Granted Nov 18, 2014·1 cites·16 claims
- 0951US2013169351A1Transistor operating methodCHANG TING-CHANG·Filed 2012·Application pending·0 cites
- 1039US2013009124A1Resistive ram having the function of diode rectificationCHANG TING-CHANG·Filed 2011·Application pending·0 cites
- 1138US7869284B1Erasing method for nonvolatile memoryACER INC·Filed 2009·Granted Jan 11, 2011·0 cites·6 claims
- 1236US8339863B2Operation method of memory deviceCHANG TING-CHANG·Filed 2010·Granted Dec 25, 2012·0 cites·19 claims
- 1336US8208307B2Operation method of memory deviceCHANG TING-CHANG·Filed 2010·Granted Jun 26, 2012·0 cites·10 claims
Join the waitlist — get patent alerts
Get an alert when Fu-Yen Jian files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →