Inventor · disambiguated record
Byoung-Taek Lee
Also filed as: LEE BYOUNG-TAEK
12 granted patents·1 pending application·373 citations·filing 1997–2003
93Inventor score
Files withSAMSUNG ELECTRONICS CO LTD12
Top patents by PatentIndex Score
13 records- 0186US6599806B2Method for manufacturing a capacitor of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 29, 2003·32 cites·16 claims
- 0286US5780115AMethods for fabricating electrode structures including oxygen and nitrogen plasma treatmentsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 14, 1998·68 cites·45 claims
- 0384US6261849B1Method of forming integrated circuit capacitors having recessed oxidation barrier spacers and method of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 17, 2001·33 cites·10 claims
- 0483US5940705AMethods of forming floating-gate FFRAM devicesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Aug 17, 1999·55 cites·13 claims
- 0581US6699625B2Reflection photomasks including buffer layer comprising group VIII metal, and methods of fabricating and using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Mar 2, 2004·27 cites·56 claims
- 0678US6998200B2Reflection photomasks with a capping layer and methods for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 14, 2006·16 cites·42 claims
- 0778US6239461B1Semiconductor device capacitor having a recessed contact plugSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted May 29, 2001·47 cites·11 claims
- 0865US6284589B1Method of fabricating concave capacitor including adhesion spacerSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Sep 4, 2001·30 cites·17 claims
- 0961US6090704AMethod for fabricating a high dielectric capacitorSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 18, 2000·27 cites·16 claims
- 1059US6084765AIntegrated circuit capacitors having recessed oxidation barrier spacersSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 4, 2000·16 cites·12 claims
- 1154US6180970B1Microelectronic devices including ferroelectric capacitors with lower electrodes extending into contact holesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jan 30, 2001·18 cites·14 claims
- 1237US2001000624A1Microelectronic devices including ferroelectric capacitors with lower electrodes extending into contact holes and related methodsFiled 2000·Application pending·0 cites
- 1335US6828190B2Method for manufacturing capacitor of semiconductor device having dielectric layer of high dielectric constantSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 7, 2004·4 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →