Inventor · disambiguated record
Masanobu Ogino
Also filed as: OGINO MASANOBU
11 granted patents·2 pending applications·344 citations·filing 1985–2008
92Inventor score
Top patents by PatentIndex Score
13 records- 0191US4990459AImpurity measuring methodTOSHIBA KK·Filed 1989·Granted Feb 5, 1991·80 cites·6 claims
- 0291US4958373ADefect-recognition processing apparatusTOSHIBA KK·Filed 1988·Granted Sep 18, 1990·90 cites·14 claims
- 0384US4894206ACrystal pulling apparatusTOSHIBA KK·Filed 1987·Granted Jan 16, 1990·33 cites·22 claims
- 0468US5023696ASemiconductor device having composite substrate formed by fixing two semiconductor substrates in close contact with each otherTOSHIBA KK·Filed 1989·Granted Jun 11, 1991·34 cites·12 claims
- 0566US5188987AMethod of manufacturing a semiconductor device using a polishing step prior to a selective vapor growth stepTOSHIBA KK·Filed 1991·Granted Feb 23, 1993·26 cites·11 claims
- 0665US5951755AManufacturing method of semiconductor substrate and inspection method thereforTOSHIBA KK·Filed 1997·Granted Sep 14, 1999·33 cites·20 claims
- 0762US5945703ASemiconductor memory device and manufacturing method thereforTOSHIBA KK·Filed 1994·Granted Aug 31, 1999·20 cites·2 claims
- 0853US2008242067A1Semiconductor substrate and method of manufacture thereofOGINO MASANOBU·Filed 2008·Application pending·0 cites
- 0945US5096839ASilicon wafer with defined interstitial oxygen concentrationTOSHIBA KK·Filed 1991·Granted Mar 17, 1992·19 cites·8 claims
- 1042US2004124445A1Semiconductor substrate and method of manufacture thereofFiled 2003·Application pending·0 cites
- 1129US5132770ASemiconductor device having improved multi-layered substrate structureTOSHIBA KK·Filed 1991·Granted Jul 21, 1992·2 cites·18 claims
- 1226US4721991ARefractory silicide conductor containing ironTOSHIBA KK·Filed 1985·Granted Jan 26, 1988·3 cites·8 claims
- 1324US5213993AMethod of manufacturing semiconductor substrate dielectric isolating structureTOBISHA KK·Filed 1992·Granted May 25, 1993·4 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →