Inventor · disambiguated record
Jung-Hsun Tsai
Also filed as: Tsai Jung-Hsun
9 granted patents·1 pending application·40 citations·filing 2015–2020
84Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD10
Top patents by PatentIndex Score
10 records- 0197US9659864B2Method and apparatus for forming self-aligned via with selectively deposited etching stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·24 cites·20 claims
- 0293US9922927B2Method and apparatus for forming self-aligned via with selectively deposited etching stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 20, 2018·6 cites·20 claims
- 0392US9818690B2Self-aligned interconnection structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 14, 2017·9 cites·20 claims
- 0477US10867913B2Method and apparatus for forming self-aligned via with selectively deposited etching stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·1 cites·20 claims
- 0574US11532552B2Method and apparatus for forming self-aligned via with selectively deposited etching stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 0655US11049811B2Forming interlayer dielectric material by spin-on metal oxide depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 29, 2021·0 cites·20 claims
- 0754US10090245B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 2, 2018·0 cites·20 claims
- 0849US9799603B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 24, 2017·0 cites·20 claims
- 0949US2018076132A1Self-Aligned Interconnection Structure and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Application pending·0 cites
- 1047US10163797B2Forming interlayer dielectric material by spin-on metal oxide depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →