Inventor · disambiguated record
Minghao Jin
Also filed as: JIN MINGHAO
6 granted patents·2 pending applications·19 citations·filing 2011–2021
76Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG5INFINEON TECHNOLOGIES AUSTRIA1JIN MINGHAO1UNIV LOUISIANA STATE1
Top patents by PatentIndex Score
8 records- 0185US9443973B2Semiconductor device with charge compensation region underneath gate trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Sep 13, 2016·6 cites·9 claims
- 0285US9425788B1Current sensors and methods of improving accuracy thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Aug 23, 2016·9 cites·21 claims
- 0367US9324823B2Semiconductor device having a tapered gate structure and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Apr 26, 2016·2 cites·19 claims
- 0464US9496339B2Semiconductor device comprising trench structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Nov 15, 2016·2 cites·20 claims
- 0555US2023390240A1Methods of treatmentUNIV LOUISIANA STATE·Filed 2021·Application pending·0 cites
- 0649US10199456B2Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Feb 5, 2019·0 cites·12 claims
- 0740US9478639B2Electrode-aligned selective epitaxy method for vertical power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Oct 25, 2016·0 cites·20 claims
- 0834US2012168859A1Vertical transistor manufacturing method and vertical transistorJIN MINGHAO·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →