Inventor · disambiguated record
Ho-In Ryu
Also filed as: RYU HO-IN
16 granted patents·7 pending applications·49 citations·filing 2007–2025
91Inventor score
Top patents by PatentIndex Score
23 records- 0192US10050041B1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 14, 2018·6 cites·10 claims
- 0291US11770925B2Semiconductor device with trench structure to reduce parasitic capacitance and leakage currentSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 26, 2023·2 cites·20 claims
- 0390US9184168B2Semiconductor devices with peripheral gate structuresRYU HO-IN·Filed 2013·Granted Nov 10, 2015·14 cites·14 claims
- 0489US10714478B2Semiconductor devices with peripheral gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 14, 2020·5 cites·26 claims
- 0588US9159730B2Methods for fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 13, 2015·11 cites·20 claims
- 0684US9985034B2Method of manufacturing a semiconductor deviceYOON CHAN SIC·Filed 2015·Granted May 29, 2018·5 cites·20 claims
- 0776US11189570B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 30, 2021·2 cites·20 claims
- 0867US11502082B2Semiconductor devices with peripheral gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·19 claims
- 0961US7745876B2Semiconductor integrated circuit devices including gate patterns having step difference therebetween and a connection line disposed between the gate patterns and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 29, 2010·1 cites·8 claims
- 1061US7595529B2Semiconductor integrated circuit devices having upper pattern aligned with lower pattern molded by semiconductor substrate and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 29, 2009·1 cites·30 claims
- 1159US2024334681A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1258US8669152B2Methods of manufacturing semiconductor devicesRYU HO-IN·Filed 2011·Granted Mar 11, 2014·1 cites·13 claims
- 1358US2024040770A1Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1457US9299827B2Semiconductor integrated circuit devices including gates having connection lines thereonSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 29, 2016·0 cites·23 claims
- 1557US8889539B2Recess gate transistorRYU HO-IN·Filed 2008·Granted Nov 18, 2014·1 cites·2 claims
- 1657US2024179892A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1754US11778810B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 1849US2016056158A1Methods of manufacturing semiconductor devicesRYU HO-IN·Filed 2015·Application pending·0 cites
- 1948US11728410B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 2048US8872262B2Semiconductor integrated circuit devices including gates having connection lines thereonKIM BONG-SOO·Filed 2010·Granted Oct 28, 2014·0 cites·23 claims
- 2144US2025359032A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2243US2012009976A1Recess gate transistorRYU HO-IN·Filed 2011·Application pending·0 cites
- 2335US2012049255A1Gate structure having a buried gate electrode, semiconductor device including the sameRYU HO-IN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →