Inventor · disambiguated record
Cloves Rinn Cleavelin
Also filed as: CLEAVELIN CLOVES R · CLEAVELIN CLOVES RINN
17 granted patents·3 pending applications·146 citations·filing 1986–2014
93Inventor score
Top patents by PatentIndex Score
20 records- 0195US7638843B2Integrating high performance and low power multi-gate devicesTEXAS INSTRUMENTS INC·Filed 2006·Granted Dec 29, 2009·53 cites·14 claims
- 0293US7683417B2Memory device with memory cell including MuGFET and fin capacitorTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 23, 2010·25 cites·7 claims
- 0387US8138035B2Method for forming integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channelsXIONG WEIZE·Filed 2011·Granted Mar 20, 2012·7 cites·14 claims
- 0482US7939393B2Method of adjusting FDSOI threshold voltage through oxide charges generation in the buried oxideTEXAS INSTRUMENTS INC·Filed 2008·Granted May 10, 2011·8 cites·27 claims
- 0580US9053966B2Integrated circuits with aligned (100) NMOS and (110) PMOS finFET sidewall channelsTEXAS INSTRUMENTS INC·Filed 2014·Granted Jun 9, 2015·3 cites·2 claims
- 0680US8872220B2Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channelsTEXAS INSTRUMENTS INC·Filed 2013·Granted Oct 28, 2014·3 cites·20 claims
- 0768US7531398B2Methods and devices employing metal layers in gates to introduce channel strainTEXAS INSTRUMENTS INC·Filed 2006·Granted May 12, 2009·4 cites·29 claims
- 0865US8410519B2Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channelsXIONG WEIZE·Filed 2012·Granted Apr 2, 2013·1 cites·19 claims
- 0962US7897994B2Method of making (100) NMOS and (110) PMOS sidewall surface on the same fin orientation for multiple gate MOSFET with DSB substrateTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 1, 2011·1 cites·14 claims
- 1060US7960234B2Multiple-gate MOSFET device and associated manufacturing methodsTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 14, 2011·2 cites·14 claims
- 1160US6097296AApparatus and method for detecting tornadoesFiled 1998·Granted Aug 1, 2000·28 cites·28 claims
- 1258US8067792B2Memory device with memory cell including MuGFET and FIN capacitorXIONG WEIZE·Filed 2009·Granted Nov 29, 2011·1 cites·14 claims
- 1354US7122442B2Method and system for dopant containmentTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 17, 2006·6 cites·12 claims
- 1450US8581317B2SOI MuGFETs having single gate electrode levelTIGELAAR HOWARD·Filed 2008·Granted Nov 12, 2013·1 cites·19 claims
- 1542US7793186B1System and method for increasing the extent of built-in self-testing of memory and circuitryTEXAS INSTRUMENTS INC·Filed 2010·Granted Sep 7, 2010·0 cites·6 claims
- 1642US7752518B2System and method for increasing the extent of built-in self-testing of memory and circuitryTEXAS INSTRUMENTS INC·Filed 2008·Granted Jul 6, 2010·0 cites·14 claims
- 1741US2008290414A1Integrating strain engineering to maximize system-on-a-chip performanceTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 1840US2008303095A1Varying mugfet width to adjust device characteristicsXIONG WEIZE·Filed 2007·Application pending·0 cites
- 1939US2007257319A1Integrating high performance and low power multi-gate devicesTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
- 2026US4839010AForming an antireflective coating for VLSI metallizationTEXAS INSTRUMENTS INC·Filed 1986·Granted Jun 13, 1989·3 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →