Inventor · disambiguated record
Min-Gun Park
Also filed as: PARK MIN-GUN
15 granted patents·285 citations·filing 2004–2013
93Inventor score
Top patents by PatentIndex Score
15 records- 0194US7467251B2Flash memory data storage apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 16, 2008·50 cites·14 claims
- 0292US7212426B2Flash memory system capable of inputting/outputting sector data at randomSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 1, 2007·73 cites·12 claims
- 0390US8582360B2Read method for nonvolatile memory device, and data storage system using the samePARK MIN GUN·Filed 2011·Granted Nov 12, 2013·15 cites·14 claims
- 0490US7551487B2Nonvolatile memory device and related programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 23, 2009·51 cites·16 claims
- 0584US7295470B2Non-volatile memory device including multi-page copyback system and methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 13, 2007·16 cites·14 claims
- 0681US8495283B2Nonvolatile memory device, memory system comprising nonvolatile memory device, and wear leveling method for nonvolatile memory devicePARK MIN GUN·Filed 2010·Granted Jul 23, 2013·7 cites·18 claims
- 0781US6930919B2NAND-type flash memory device having array of status cells for storing block erase/program informationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 16, 2005·31 cites·17 claims
- 0878US7663922B2Non-volatile semiconductor memory devices with lower and upper bit lines sharing a voltage control block, and memory cards and systems having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 16, 2010·12 cites·14 claims
- 0973US7636265B2Flash memory device capable of reduced programming timeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 22, 2009·7 cites·20 claims
- 1068US7907454B2Method of verifying programming operation of flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 15, 2011·6 cites·11 claims
- 1168US7672160B23-level non-volatile semiconductor memory devices and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 2, 2010·7 cites·11 claims
- 1265US7623383B2Three-level non-volatile semiconductor memory devices with lower and upper bit lines sharing a voltage control blockSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 24, 2009·6 cites·17 claims
- 1357US7394700B2Programming methods for a nonvolatile memory device using a Y-scan operation during a verify read operationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 1, 2008·3 cites·15 claims
- 1448US7974128B2Flash memory device capable of reduced programming timeSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 5, 2011·1 cites·17 claims
- 1544US9159440B2Read method for nonvolatile memory device, and data storage system using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 13, 2015·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →