Inventor · disambiguated record
Jinyuan Chen
Also filed as: CHEN JINYUAN
12 granted patents·5 pending applications·111 citations·filing 1994–2015
89Inventor score
Files withADVANCED MICRO FAB EQUIP INC5YIN GERALD2ADVANCED MICRO FABRICATION EQUIPMENT INC CHINA1CHEN AIHUA1CHEN JINYUAN1
Top patents by PatentIndex Score
17 records- 0195US7503996B2Multiple frequency plasma chamber, switchable RF system, and processes using sameADVANCED MICRO FAB EQUIP INC·Filed 2007·Granted Mar 17, 2009·33 cites·21 claims
- 0290US8336488B2Multi-station plasma reactor with multiple plasma regionsCHEN AIHUA·Filed 2007·Granted Dec 25, 2012·11 cites·28 claims
- 0386US8366829B2Multi-station decoupled reactive ion etch chamberADVANCED MICRO FAB EQUIP INC·Filed 2007·Granted Feb 5, 2013·10 cites·17 claims
- 0484US8111499B2System and method of sensing and removing residual charge from a processed waferNI TUQIANG·Filed 2009·Granted Feb 7, 2012·13 cites·23 claims
- 0578US8297225B2Capacitive CVD reactor and methods for plasma CVD processYIN GERALD·Filed 2009·Granted Oct 30, 2012·6 cites·14 claims
- 0677US8608851B2Plasma confinement apparatus, and method for confining a plasmaNI TOM·Filed 2006·Granted Dec 17, 2013·7 cites·11 claims
- 0763US10201069B2High frequency power supply device and high frequency power supplying methodPEARL KOGYO CO LTD·Filed 2015·Granted Feb 5, 2019·1 cites·12 claims
- 0860US5564085ACellular telephone RF radiation ameliorating deviceFiled 1994·Granted Oct 8, 1996·30 cites·6 claims
- 0955US10187965B2Plasma confinement apparatus, and method for confining a plasmaADVANCED MICRO FABRICATION EQUIPMENT INC CHINA·Filed 2013·Granted Jan 22, 2019·0 cites·18 claims
- 1050US2013048216A1Capacitive cvd reactor and methods for plasma cvd processADVANCED MICRO FAB EQUIP INC·Filed 2012·Application pending·0 cites
- 1148US9208998B2Multi-station decoupled reactive ion etch chamberYIN GERALD·Filed 2012·Granted Dec 8, 2015·0 cites·20 claims
- 1247US2008128087A1High frequency power supply device and high frequency power supplying methodHAYANO EIICH·Filed 2007·Application pending·0 cites
- 1347US2010271745A1Electrostatic chuck and base for plasma reactor having improved wafer etch rateADVANCED MICRO FAB EQUIP INC·Filed 2009·Application pending·0 cites
- 1444US8975194B2Method for manufacturing oxide layerUNIV PEKING FOUNDER GROUP CO·Filed 2013·Granted Mar 10, 2015·0 cites·6 claims
- 1538US2011030900A1Plasma chamber having switchable bias power and a switchable frequency rf match network thereforADVANCED MICRO FAB EQUIP INC·Filed 2010·Application pending·0 cites
- 1634US2012075033A1Single matching network for matching multi-frequency and method of constructuring the same and radio frequency power source system using the sameOUYANG LIANG·Filed 2011·Application pending·0 cites
- 1732US9271384B2Plasma processing apparatusCHEN JINYUAN·Filed 2011·Granted Feb 23, 2016·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →