Inventor · disambiguated record
Clifford A. King
Also filed as: KING CLIFFORD · KING CLIFFORD A · KING CLIFFORD ALAN
28 granted patents·5 pending applications·908 citations·filing 1988–2023
97Inventor score
Files withNOBLE PEAK VISION CORP6LUCENT TECHNOLOGIES INC5RAFFERTY CONOR S5INFRARED NEWCO INC4AGERE SYSTEMS INC2
Top patents by PatentIndex Score
33 records- 0196US7629661B2Semiconductor devices with photoresponsive components and metal silicide light blocking structuresNOBLE PEAK VISION CORP·Filed 2006·Granted Dec 8, 2009·55 cites·30 claims
- 0295US7973377B2Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitryINFRARED NEWCO INC·Filed 2008·Granted Jul 5, 2011·25 cites·10 claims
- 0395US7012314B2Semiconductor devices with reduced active region defects and unique contacting schemesAGERE SYSTEMS INC·Filed 2003·Granted Mar 14, 2006·110 cites·38 claims
- 0494US8664739B2Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitryKING CLIFFORD A·Filed 2011·Granted Mar 4, 2014·26 cites·5 claims
- 0592US7453129B2Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitryNOBLE PEAK VISION CORP·Filed 2004·Granted Nov 18, 2008·48 cites·18 claims
- 0692US7297569B2Semiconductor devices with reduced active region defects and unique contacting schemesNOBLE DEVICE TECHNOLOGIES CORP·Filed 2005·Granted Nov 20, 2007·62 cites·39 claims
- 0790US5767561AIntegrated circuit device with isolated circuit elementsLUCENT TECHNOLOGIES INC·Filed 1997·Granted Jun 16, 1998·126 cites·6 claims
- 0889US11973093B2Visible-to-longwave infrared single photon avalanche photodetector on siliconSEMIKING LLC·Filed 2021·Granted Apr 30, 2024·3 cites·20 claims
- 0989US6509242B2Heterojunction bipolar transistorAGERE SYSTEMS INC·Filed 2001·Granted Jan 21, 2003·56 cites·18 claims
- 1088US7288825B2Low-noise semiconductor photodetectorsNOBLE PEAK VISION CORP·Filed 2005·Granted Oct 30, 2007·9 cites·27 claims
- 1187US5834800AHeterojunction bipolar transistor having mono crystalline SiGe intrinsic base and polycrystalline SiGe and Si extrinsic base regionsLUCENT TECHNOLOGIES INC·Filed 1996·Granted Nov 10, 1998·91 cites·3 claims
- 1284US8648948B2Imaging systems with multiple imaging pixel types and related methodsRAFFERTY CONOR S·Filed 2009·Granted Feb 11, 2014·11 cites·30 claims
- 1381US8294100B2Imaging apparatus and methodsRAFFERTY CONOR S·Filed 2011·Granted Oct 23, 2012·3 cites·10 claims
- 1481US5620907AMethod for making a heterojunction bipolar transistorLUCENT TECHNOLOGIES INC·Filed 1996·Granted Apr 15, 1997·59 cites·13 claims
- 1580US7643755B2Optical receiver comprising a receiver photodetector integrated with an imaging arrayNOBLE PEAK VISION CORP·Filed 2004·Granted Jan 5, 2010·22 cites·19 claims
- 1678US9142585B2Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitryINFRARED NEWCO INC·Filed 2014·Granted Sep 22, 2015·2 cites·2 claims
- 1777US5256550AFabricating a semiconductor device with strained Si1-x Gex layerHEWLETT PACKARD CO·Filed 1991·Granted Oct 26, 1993·69 cites·18 claims
- 1874US12078728B2High dynamic range single photon avalanche detector array on silicon with circuitry for light detection and rangingSEMIKING LLC·Filed 2021·Granted Sep 3, 2024·1 cites·20 claims
- 1971US6087683ASilicon germanium heterostructure bipolar transistor with indium doped baseLUCENT TECHNOLOGIES INC·Filed 1998·Granted Jul 11, 2000·38 cites·19 claims
- 2070US5281552AMOS fabrication process, including deposition of a boron-doped diffusion source layerAT & T BELL LAB·Filed 1993·Granted Jan 25, 1994·55 cites·15 claims
- 2165US7589380B2Method for forming integrated circuit utilizing dual semiconductorsNOBLE PEAK VISION CORP·Filed 2005·Granted Sep 15, 2009·3 cites·18 claims
- 2264US8766393B2Low-noise semiconductor photodetectorsRAFFERTY CONOR S·Filed 2011·Granted Jul 1, 2014·0 cites·10 claims
- 2358US8084739B2Imaging apparatus and methodsRAFFERTY CONOR S·Filed 2009·Granted Dec 27, 2011·0 cites·44 claims
- 2458US8035186B2Low-noise semiconductor photodetectorsINFRARED NEWCO INC·Filed 2007·Granted Oct 11, 2011·0 cites·10 claims
- 2556US2024347561A1Visible to longwave infrared photodetector on siliconUNIV ARKANSAS·Filed 2023·Application pending·0 cites
- 2655US5084411ASemiconductor processing with silicon cap over Si1-x Gex FilmHEWLETT PACKARD CO·Filed 1988·Granted Jan 28, 1992·21 cites·3 claims
- 2755US2015364515A1Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitryINFRARED NEWCO INC·Filed 2015·Application pending·0 cites
- 2855US2010044823A1Semiconductor photonic devices with enhanced responsivity and reduced stray lightNOBLE PEAK VISION CORP·Filed 2009·Application pending·0 cites
- 2954US8686365B2Imaging apparatus and methodsRAFFERTY CONOR S·Filed 2009·Granted Apr 1, 2014·0 cites·18 claims
- 3051US2012062774A1Adaptive solid state image sensorACKLAND BRYAN D·Filed 2011·Application pending·0 cites
- 3148US2006055800A1Adaptive solid state image sensorNOBLE DEVICE TECHNOLOGIES CORP·Filed 2005·Application pending·0 cites
- 3244US6121101AProcess for fabricating bipolar and BiCMOS devicesLUCENT TECHNOLOGIES INC·Filed 1998·Granted Sep 19, 2000·9 cites·5 claims
- 3330US5096840AMethod of making a polysilicon emitter bipolar transistorAT & T BELL LAB·Filed 1990·Granted Mar 17, 1992·4 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →