Inventor · disambiguated record
Jason Jenq
Also filed as: JENQ JASON · JENQ JASON J S · JENQ JASON JYH-SHYANG
28 granted patents·6 pending applications·502 citations·filing 1995–2003
97Inventor score
Top patents by PatentIndex Score
34 records- 0183US5851876AMethod of manufacturing dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 1998·Granted Dec 22, 1998·48 cites·27 claims
- 0282US5989997AMethod for forming dual damascene structureUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 23, 1999·67 cites·27 claims
- 0375US6303521B1Method for forming oxide layers with different thicknessesUNITED MICROELECTRICS CORP·Filed 2000·Granted Oct 16, 2001·18 cites·11 claims
- 0472US5874335AMethod of fabricating DRAM capacitorsUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 23, 1999·33 cites·28 claims
- 0571US6025277AMethod and structure for preventing bonding pad peel backUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 15, 2000·44 cites·24 claims
- 0669US5795805AFabricating method of dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 1997·Granted Aug 18, 1998·26 cites·11 claims
- 0768US5981334AMethod of fabricating DRAM capacitorFiled 1997·Granted Nov 9, 1999·29 cites·19 claims
- 0865US6159788AMethod to increase DRAM cell capacitanceUNITED MICROELECTRONICS CORP·Filed 1997·Granted Dec 12, 2000·24 cites·15 claims
- 0964US6884671B2Method for fabricating a gate electrodeUNITED MICROELECTRONICS CORP·Filed 2003·Granted Apr 26, 2005·7 cites·39 claims
- 1063US5536673AMethod for making dynamic random access memory (DRAM) cells having large capacitor electrode plates for increased capacitanceUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jul 16, 1996·21 cites·22 claims
- 1161US6121085AMethod of fabricating contact openings for dynamic random-access memoryUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 19, 2000·18 cites·13 claims
- 1259US6114231AWafer structure for securing bonding pads on integrated circuit chips and a method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 1996·Granted Sep 5, 2000·27 cites·10 claims
- 1359US5989953AMethod for manufacturing DRAM capacitorUNITED MICROELECTRONICS CORP·Filed 1997·Granted Nov 23, 1999·17 cites·23 claims
- 1453US5893751ASelf-aligned silicide manufacturing methodUNITED MICROELECTRONICS CORP·Filed 1996·Granted Apr 13, 1999·14 cites·14 claims
- 1552US5981330AProcess for fabricating bitlinesUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 9, 1999·17 cites·11 claims
- 1649US6030867AMethod of fabricating a Fin/HSG DRAM cell capacitorUNITED MICROELECTRONICS CORP·Filed 1997·Granted Feb 29, 2000·16 cites·24 claims
- 1748US6204146B1Method of fabricating shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 20, 2001·14 cites·17 claims
- 1848US6153465AMethod of fabricating a capacitor of dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 28, 2000·11 cites·14 claims
- 1948US5960280AMethod of fabricating a fin/cavity capacitor structure for DRAM cellUNITED MICROELECTRONICS CORP·Filed 1997·Granted Sep 28, 1999·11 cites·20 claims
- 2047US6258651B1Method for forming an embedded memory and a logic circuit on a single substrateUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 10, 2001·9 cites·13 claims
- 2141US2003211682A1Method for fabricating a gate electrodeFiled 2002·Application pending·0 cites
- 2239US6107132AMethod of manufacturing a DRAM capacitorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Aug 22, 2000·6 cites·13 claims
- 2339US5937307AProcess for fabricating DRAM capacitorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Aug 10, 1999·6 cites·15 claims
- 2438US5874334AMethod for fabricating DRAM capacitorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 23, 1999·5 cites·25 claims
- 2537US2001039108A1Method for forming gateFiled 2001·Application pending·0 cites
- 2637US2003207549A1Method of forming a silicate dielectric layerFiled 2002·Application pending·0 cites
- 2736US5872055AMethod for fabricating polysilicon conducting wiresUNITED MICROELECTRONICS CORP·Filed 1996·Granted Feb 16, 1999·5 cites·19 claims
- 2836US2003162351A1Oxidation resistane structure for metal insulator metal capacitorUNITED MICROELECTRONICS CORP·Filed 2002·Application pending·0 cites
- 2936US2002142553A1Method of forming an ultra-shallow junctionFiled 2001·Application pending·0 cites
- 3035US6316344B1Method for forming gateUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 13, 2001·3 cites·6 claims
- 3133US6080619AMethod for manufacturing DRAM capacitorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jun 27, 2000·2 cites·11 claims
- 3233US6017788AMethod of fabricating bit lineUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jan 25, 2000·2 cites·13 claims
- 3332US5924007AMethod for improving the planarization of inter-poly dielectricUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jul 13, 1999·2 cites·6 claims
- 3428US2002072231A1Method of forming a self-aligned silicideUNITED MICROELECTRONICS CORP·Filed 2000·Application pending·0 cites
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