Inventor · disambiguated record
Kazunori Imaoka
Also filed as: IMAOKA KAZUNORI
16 granted patents·377 citations·filing 1984–1997
95Inventor score
Files withFUJITSU LTD16
Top patents by PatentIndex Score
16 records- 0172US5231045AMethod of producing semiconductor-on-insulator structure by besol process with charged insulating layersFUJITSU LTD·Filed 1991·Granted Jul 27, 1993·50 cites·14 claims
- 0269US5148247ASemiconductor device having trench isolationFUJITSU LTD·Filed 1991·Granted Sep 15, 1992·41 cites·23 claims
- 0367US5426073AMethod of fabricating semiconductor devices using an intermediate grinding stepFUJITSU LTD·Filed 1993·Granted Jun 20, 1995·44 cites·16 claims
- 0466US4597804AMethods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor thereinFUJITSU LTD·Filed 1984·Granted Jul 1, 1986·27 cites·25 claims
- 0564US4801559AProcess for forming planar wiring using polysilicon to fill gapsFUJITSU LTD·Filed 1988·Granted Jan 31, 1989·30 cites·5 claims
- 0658US5250836ASemiconductor device having silicon-on-insulator structureFUJITSU LTD·Filed 1992·Granted Oct 5, 1993·26 cites·19 claims
- 0757US5238857AMethod of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structureFUJITSU LTD·Filed 1992·Granted Aug 24, 1993·18 cites·3 claims
- 0853US5066993ASemiconductor device having semiconductor-on-insulator structureFUJITSU LTD·Filed 1989·Granted Nov 19, 1991·19 cites·8 claims
- 0952US5162254ASemiconductor device having a SOI substrate and fabrication method thereofFUJITSU LTD·Filed 1990·Granted Nov 10, 1992·23 cites·13 claims
- 1052US5094963AProcess for producing a semiconductor device with a bulk-defect region having a nonuniform depthFUJITSU LTD·Filed 1990·Granted Mar 10, 1992·23 cites·9 claims
- 1151US6232663B1Semiconductor device having interlayer insulator and method for fabricating thereofFUJITSU LTD·Filed 1997·Granted May 15, 2001·19 cites·11 claims
- 1248US5075249AMethod of making a bic memory cell having contact openings with straight sidewalls and sharp-edge rimsFUJITSU LTD·Filed 1989·Granted Dec 24, 1991·11 cites·10 claims
- 1347US5498893ASemiconductor device having SOI substrate and fabrication method thereofFUJITSU LTD·Filed 1995·Granted Mar 12, 1996·15 cites·10 claims
- 1440US5017998ASemiconductor device using SOI substrateFUJITSU LTD·Filed 1990·Granted May 21, 1991·11 cites·10 claims
- 1539US4970568ASemiconductor device and a process for producing a semiconductor deviceFUJITSU LTD·Filed 1989·Granted Nov 13, 1990·10 cites·10 claims
- 1639US4918499ASemiconductor device with improved isolation between trench capacitorsFUJITSU LTD·Filed 1988·Granted Apr 17, 1990·10 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →