Inventor · disambiguated record
Gheorghe Samachisa
Also filed as: SAMACHISA GHEORGHE
26 granted patents·4,696 citations·filing 1986–2006
98Inventor score
Top patents by PatentIndex Score
26 records- 0199US5712180AEEPROM with split gate source side injectionSUNDISK CORP·Filed 1996·Granted Jan 27, 1998·480 cites·27 claims
- 0299US5595924ATechnique of forming over an irregular surface a polysilicon layer with a smooth surfaceSANDISK CORP·Filed 1994·Granted Jan 21, 1997·484 cites·8 claims
- 0399US5343063ADense vertical programmable read only memory cell structure and processes for making themSUNDISK CORP·Filed 1990·Granted Aug 30, 1994·903 cites·43 claims
- 0499US5313421AEEPROM with split gate source side injectionSUNDISK CORP·Filed 1992·Granted May 17, 1994·1k cites·42 claims
- 0598US6664587B2EEPROM cell array structure with specific floating gate shapeSANDISK CORP·Filed 2002·Granted Dec 16, 2003·146 cites·19 claims
- 0698US5883409AEEPROM with split gate source side injectionSANDISK CORP·Filed 1997·Granted Mar 16, 1999·216 cites·34 claims
- 0797US5776810AMethod for forming EEPROM with split gate source side injectionSANDISK CORP·Filed 1994·Granted Jul 7, 1998·138 cites·3 claims
- 0897US5380672ADense vertical programmable read only memory cell structures and processes for making themSUNDISK CORP·Filed 1993·Granted Jan 10, 1995·139 cites·24 claims
- 0996US5272669AMethod and structure for programming floating gate memory cellsSUNDISK CORP·Filed 1991·Granted Dec 21, 1993·158 cites·26 claims
- 1095US6704222B2Multi-state operation of dual floating gate arraySANDISK CORP·Filed 2002·Granted Mar 9, 2004·62 cites·6 claims
- 1195US5534456AMethod of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with sidewall spacersSANDISK CORP·Filed 1995·Granted Jul 9, 1996·171 cites·9 claims
- 1293US6002152AEEPROM with split gate source side injection with sidewall spacersSANDISK CORP·Filed 1998·Granted Dec 14, 1999·90 cites·24 claims
- 1393US5847996AEeprom with split gate source side injectionSANDISK CORP·Filed 1996·Granted Dec 8, 1998·78 cites·99 claims
- 1492US5965913ADense vertical programmable read only memory cell structures and processes for making themSANDISK CORP·Filed 1997·Granted Oct 12, 1999·74 cites·9 claims
- 1591US5847425ADense vertical programmable read only memory cell structures and processes for making themSANDISK CORP·Filed 1994·Granted Dec 8, 1998·61 cites·9 claims
- 1691US4783766ABlock electrically erasable EEPROMSEEQ TECHNOLOGY INC·Filed 1986·Granted Nov 8, 1988·66 cites·7 claims
- 1789US5747359AMethod of patterning polysilicon layers on substrateSANDISK CORP·Filed 1997·Granted May 5, 1998·75 cites·1 claims
- 1888US5756385ADense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacersSANDISK CORP·Filed 1995·Granted May 26, 1998·107 cites·4 claims
- 1986US5654217ADense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacersSANDISK CORP·Filed 1995·Granted Aug 5, 1997·63 cites·8 claims
- 2083US5512505AMethod of making dense vertical programmable read only memory cell structureSANDISK CORP·Filed 1995·Granted Apr 30, 1996·76 cites·6 claims
- 2180US6861700B2Eeprom with split gate source side injectionSANDISK CORP·Filed 2003·Granted Mar 1, 2005·17 cites·7 claims
- 2278US5910915AEEPROM with split gate source side injectionSANDISK CORP·Filed 1998·Granted Jun 8, 1999·28 cites·7 claims
- 2378US5910925AEEPROM with split gate source side injectionSANDISK CORP·Filed 1998·Granted Jun 8, 1999·28 cites·6 claims
- 2476US6954381B2EEPROM with split gate source side injection with sidewall spacersSANDISK CORP·Filed 2002·Granted Oct 11, 2005·13 cites·4 claims
- 2573US7449746B2EEPROM with split gate source side injectionSANDISK CORP·Filed 2006·Granted Nov 11, 2008·3 cites·13 claims
- 2654US7071060B1EEPROM with split gate source side infection with sidewall spacersSANDISK CORP·Filed 1999·Granted Jul 4, 2006·9 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →