Inventor · disambiguated record
Kuen-Ting Shiu
Also filed as: SHIU KUEN-TING · SHIU KUEN-TING R
106 granted patents·19 pending applications·411 citations·filing 2005–2024
99Inventor score
Top patents by PatentIndex Score
125 records- 0199US9287362B1Vertical field effect transistors with controlled overlap between gate electrode and source/drain contactsIBM·Filed 2014·Granted Mar 15, 2016·62 cites·10 claims
- 0297US8937299B2III-V finFETs on silicon substrateIBM·Filed 2013·Granted Jan 20, 2015·40 cites·10 claims
- 0396US9608160B1Polarization free gallium nitride-based photonic devices on nanopatterned siliconIBM·Filed 2016·Granted Mar 28, 2017·19 cites·17 claims
- 0496US9397226B2Vertical field effect transistors with controlled overlap between gate electrode and source/drain contactsIBM·Filed 2015·Granted Jul 19, 2016·12 cites·14 claims
- 0595US9431301B1Nanowire field effect transistor (FET) and method for fabricating the sameIBM·Filed 2015·Granted Aug 30, 2016·11 cites·14 claims
- 0694US9564494B1Enhanced defect reduction for heteroepitaxy by seed shape engineeringIBM·Filed 2015·Granted Feb 7, 2017·9 cites·20 claims
- 0794US8378385B2Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growthUNIV MICHIGAN·Filed 2010·Granted Feb 19, 2013·16 cites·13 claims
- 0893US8975635B2Co-integration of elemental semiconductor devices and compound semiconductor devicesIBM·Filed 2012·Granted Mar 10, 2015·11 cites·20 claims
- 0993US8841177B2Co-integration of elemental semiconductor devices and compound semiconductor devicesIBM·Filed 2012·Granted Sep 23, 2014·11 cites·25 claims
- 1093US8610172B2FETs with hybrid channel materialsGUO DECHAO·Filed 2011·Granted Dec 17, 2013·17 cites·21 claims
- 1193US7343061B2Integrated photonic amplifier and detectorUNIV PRINCETON·Filed 2005·Granted Mar 11, 2008·24 cites·24 claims
- 1292US9048173B2Dual phase gallium nitride material formation on (100) siliconIBM·Filed 2012·Granted Jun 2, 2015·12 cites·13 claims
- 1392US8536043B2Reduced S/D contact resistance of III-V MOSFET using low temperature metal-induced crystallization of n+ GeKIM JEEHWAN·Filed 2011·Granted Sep 17, 2013·14 cites·21 claims
- 1492US8420474B1Controlling threshold voltage in carbon based field effect transistorsFRANK MARTIN M·Filed 2012·Granted Apr 16, 2013·15 cites·23 claims
- 1591US9496347B1Graded buffer epitaxy in aspect ratio trappingIBM·Filed 2015·Granted Nov 15, 2016·7 cites·20 claims
- 1690US9401583B1Laser structure on silicon using aspect ratio trapping growthIBM·Filed 2015·Granted Jul 26, 2016·5 cites·20 claims
- 1790US8772116B2Dielectric equivalent thickness and capacitance scaling for semiconductor devicesIBM·Filed 2012·Granted Jul 8, 2014·11 cites·47 claims
- 1889US9548355B1Compound finFET device including oxidized III-V fin isolatorIBM·Filed 2015·Granted Jan 17, 2017·5 cites·5 claims
- 1989US9406566B1Integration of III-V compound materials on siliconIBM·Filed 2015·Granted Aug 2, 2016·5 cites·3 claims
- 2089US9318641B2Nanowires formed by employing solder nanodotsIBM·Filed 2015·Granted Apr 19, 2016·2 cites·9 claims
- 2189US9059075B2Selective gallium nitride regrowth on (100) siliconIBM·Filed 2013·Granted Jun 16, 2015·7 cites·14 claims
- 2288US9508640B2Multiple via structure and methodGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 29, 2016·9 cites·17 claims
- 2386US9123569B1Complementary metal-oxide-semiconductor structure with III-V and silicon germanium transistors on insulatorIBM·Filed 2014·Granted Sep 1, 2015·7 cites·20 claims
- 2485US9344200B2Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowthIBM·Filed 2014·Granted May 17, 2016·5 cites·20 claims
- 2584US9887264B2Nanowire field effect transistor (FET) and method for fabricating the sameIBM·Filed 2016·Granted Feb 6, 2018·3 cites·17 claims
- 2684US9231133B2Nanowires formed by employing solder nanodotsFOGEL KEITH E·Filed 2010·Granted Jan 5, 2016·2 cites·15 claims
- 2783US8492187B2High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrateCHENG CHENG-WEI·Filed 2011·Granted Jul 23, 2013·4 cites·18 claims
- 2882US9093532B2Overlapped III-V finFET with doped semiconductor extensionsIBM·Filed 2013·Granted Jul 28, 2015·5 cites·10 claims
- 2981US10043663B2Enhanced defect reduction for heteroepitaxy by seed shape engineeringIBM·Filed 2016·Granted Aug 7, 2018·2 cites·20 claims
- 3081US8482033B2High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrateCHENG CHENG-WEI·Filed 2012·Granted Jul 9, 2013·3 cites·20 claims
- 3180US9407066B2III-V lasers with integrated silicon photonic circuitsGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 2, 2016·3 cites·13 claims
- 3279US9059232B2T-shaped compound semiconductor lateral bipolar transistor on semiconductor-on-insulatorIBM·Filed 2013·Granted Jun 16, 2015·4 cites·9 claims
- 3378US9070617B2Reduced S/D contact resistance of III-V mosfet using low temperature metal-induced crystallization of n+ GeIBM·Filed 2013·Granted Jun 30, 2015·3 cites·9 claims
- 3478US8628996B2Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cellsDIMITRAKOPOULOS CHRISTOS·Filed 2011·Granted Jan 14, 2014·2 cites·20 claims
- 3577US9595805B2III-V photonic integrated circuits on silicon substrateIBM·Filed 2014·Granted Mar 14, 2017·2 cites·11 claims
- 3677US9059271B2Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formationIBM·Filed 2013·Granted Jun 16, 2015·2 cites·20 claims
- 3776US9263626B1Crystalline thin film photovoltaic cellIBM·Filed 2015·Granted Feb 16, 2016·2 cites·20 claims
- 3875US9159822B2III-V semiconductor device having self-aligned contactsIBM·Filed 2014·Granted Oct 13, 2015·3 cites·13 claims
- 3975US9099381B2Selective gallium nitride regrowth on (100) siliconIBM·Filed 2012·Granted Aug 4, 2015·2 cites·16 claims
- 4074US9406530B2Techniques for fabricating reduced-line-edge-roughness trenches for aspect ratio trappingIBM·Filed 2014·Granted Aug 2, 2016·2 cites·23 claims
- 4174US8946054B2Crack control for substrate separationIBM·Filed 2013·Granted Feb 3, 2015·2 cites·20 claims
- 4274US8796120B2High throughput epitaxial lift off for flexible electronicsIBM·Filed 2013·Granted Aug 5, 2014·2 cites·24 claims
- 4373US8927398B2Group III nitrides on nanopatterned substratesIBM·Filed 2013·Granted Jan 6, 2015·2 cites·20 claims
- 4473US7915521B2Type II quantum dot solar cellsUNIV PRINCETON·Filed 2007·Granted Mar 29, 2011·4 cites·8 claims
- 4572US9865469B2Epitaxial lift-off process with guided etchingIBM·Filed 2017·Granted Jan 9, 2018·1 cites·18 claims
- 4672US9459797B2Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cellsGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 4, 2016·0 cites·13 claims
- 4772US8822317B2Self-aligned III-V MOSFET diffusion regions and silicide-like alloy contactCHENG CHENG-WEI·Filed 2012·Granted Sep 2, 2014·2 cites·14 claims
- 4871US9395489B2Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxially formed materialIBM·Filed 2014·Granted Jul 19, 2016·2 cites·20 claims
- 4970US9570296B2Preparation of low defect density of III-V on Si for device fabricationIBM·Filed 2015·Granted Feb 14, 2017·1 cites·14 claims
- 5069US9704958B1III-V field effect transistor on a dielectric layerIBM·Filed 2015·Granted Jul 11, 2017·1 cites·15 claims
Showing the top 50 of 125 patent records by PatentIndex Score.
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