Inventor · disambiguated record
Seiichi Aritome
Also filed as: ARITOME SEIICHI
282 granted patents·8 pending applications·8,974 citations·filing 1990–2016
99Inventor score
Top patents by PatentIndex Score
290 records- 0199US7660158B2Programming method to reduce gate coupling interference for non-volatile memoryMICRON TECHNOLOGY INC·Filed 2008·Granted Feb 9, 2010·100 cites·20 claims
- 0299US7433231B2Multiple select gates with non-volatile memory cellsMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 7, 2008·120 cites·21 claims
- 0399US7400532B2Programming method to reduce gate coupling interference for non-volatile memoryMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 15, 2008·467 cites·50 claims
- 0499US7292476B2Programming method for NAND EEPROMMICRON TECHNOLOGY INC·Filed 2005·Granted Nov 6, 2007·126 cites·51 claims
- 0599US5774397ANon-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined stateTOSHIBA KK·Filed 1996·Granted Jun 30, 1998·1.1k cites·54 claims
- 0698US7580287B2Program and read trim settingMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 25, 2009·60 cites·36 claims
- 0798US7450425B2Non-volatile memory cell read failure reductionMICRON TECHNOLOGY INC·Filed 2006·Granted Nov 11, 2008·91 cites·18 claims
- 0898US7408810B2Minimizing effects of program disturb in a memory deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 5, 2008·107 cites·25 claims
- 0998US6342715B1Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1998·Granted Jan 29, 2002·216 cites·21 claims
- 1098US6340611B1Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2000·Granted Jan 22, 2002·160 cites·21 claims
- 1198US5602789AElectrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controllerTOSHIBA KK·Filed 1995·Granted Feb 11, 1997·284 cites·25 claims
- 1298US5555204ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1994·Granted Sep 10, 1996·203 cites·34 claims
- 1398US5386422AElectrically erasable and programmable non-volatile memory system with write-verify controller using two reference levelsTOSHIBA KK·Filed 1994·Granted Jan 31, 1995·293 cites·2 claims
- 1497US7724577B2NAND with back biased operationMICRON TECHNOLOGY INC·Filed 2008·Granted May 25, 2010·51 cites·17 claims
- 1597US7561469B2Programming method to reduce word line to word line breakdown for NAND flashMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 14, 2009·54 cites·30 claims
- 1697US7263006B2Memory block erasing in a flash memory deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 28, 2007·61 cites·22 claims
- 1797US6353242B1Nonvolatile semiconductor memoryTOSHIBA KK·Filed 1999·Granted Mar 5, 2002·127 cites·22 claims
- 1897US6265739B1Non-volatile semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 1998·Granted Jul 24, 2001·120 cites·16 claims
- 1997US6222225B1Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 1999·Granted Apr 24, 2001·176 cites·9 claims
- 2097US6046940ANonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1999·Granted Apr 4, 2000·169 cites·7 claims
- 2197US6014330ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1998·Granted Jan 11, 2000·120 cites·56 claims
- 2297US5949101ASemiconductor memory device comprising multi-level logic value of the threshold voltageTOSHIBA KK·Filed 1995·Granted Sep 7, 1999·203 cites·32 claims
- 2397US5946231ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1998·Granted Aug 31, 1999·129 cites·56 claims
- 2496US7916543B2Memory cell operationMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 29, 2011·41 cites·9 claims
- 2596US7619918B2Apparatus, method, and system for flash memoryINTEL CORP·Filed 2006·Granted Nov 17, 2009·58 cites·29 claims
- 2696US7471565B2Reducing effects of program disturb in a memory deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Dec 30, 2008·35 cites·37 claims
- 2796US5361227ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1992·Granted Nov 1, 1994·103 cites·130 claims
- 2895US8610194B2Semiconductor device with vertical gate and method for fabricating the sameARITOME SEIICHI·Filed 2010·Granted Dec 17, 2013·21 cites·6 claims
- 2995US7474560B2Non-volatile memory with both single and multiple level cellsMICRON TECHNOLOGY INC·Filed 2006·Granted Jan 6, 2009·28 cites·39 claims
- 3095US7440321B2Multiple select gate architecture with select gates of different lengthsMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 21, 2008·36 cites·52 claims
- 3195US6512253B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2001·Granted Jan 28, 2003·45 cites·20 claims
- 3295US5889304ANonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1997·Granted Mar 30, 1999·165 cites·20 claims
- 3395US5293337AElectrically erasable programmable read-only memory with electric field decreasing controllerTOSHIBA KK·Filed 1991·Granted Mar 8, 1994·100 cites·13 claims
- 3494US9070446B1Semiconductor deviceSK HYNIX INC·Filed 2014·Granted Jun 30, 2015·17 cites·22 claims
- 3594US7898856B2Memory cell heightsMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 1, 2011·22 cites·25 claims
- 3694US7539052B2Non-volatile multilevel memory cell programmingMICRON TECHNOLOGY INC·Filed 2006·Granted May 26, 2009·27 cites·38 claims
- 3794US7495966B2Memory voltage cycle adjustmentMICRON TECHNOLOGY INC·Filed 2006·Granted Feb 24, 2009·24 cites·31 claims
- 3894US7259991B2Operation of multiple select gate architectureMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 21, 2007·34 cites·50 claims
- 3994US7212447B2NAND flash memory cell programmingMICRON TECHNOLOGY INC·Filed 2005·Granted May 1, 2007·26 cites·9 claims
- 4094US6191975B1Non-volatile NAND type semiconductor memory device with stacked gate memory cells and a stacked gate select transistorTOSHIBA KK·Filed 1999·Granted Feb 20, 2001·132 cites·12 claims
- 4194US6188611B1Non-volatile semiconductor memory deviceTOSHIBA KK·Filed 1999·Granted Feb 13, 2001·79 cites·6 claims
- 4294US5946230ANonvolatile semiconductor memory device having the reliability of gate insulating film of memory cells enhanced and method for manufacturing the sameTOSHIBA KK·Filed 1998·Granted Aug 31, 1999·101 cites·17 claims
- 4394US5680347ANonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1995·Granted Oct 21, 1997·94 cites·46 claims
- 4494US5469444AElectrically erasable and programmable non-volatile memory system with write-verify controller using two reference levelsTOSHIBA KK·Filed 1994·Granted Nov 21, 1995·174 cites·20 claims
- 4594US5321699AElectrically erasable and programmable non-volatile memory system with write-verify controller using two reference levelsTOSHIBA KK·Filed 1992·Granted Jun 14, 1994·171 cites·20 claims
- 4693US8462548B2Non-volatile memory device capable of reducing floating gate-to-floating gate coupling effect during programmingARITOME SEIICHI·Filed 2011·Granted Jun 11, 2013·15 cites·16 claims
- 4793US7952922B2Method for programming a non-volatile memory device to reduce floating-gate-to-floating-gate coupling effectMICRON TECHNOLOGY INC·Filed 2006·Granted May 31, 2011·26 cites·14 claims
- 4893US7551466B2Bit line couplingMICRON TECHNOLOGY INC·Filed 2006·Granted Jun 23, 2009·19 cites·35 claims
- 4993US7525841B2Programming method for NAND flashMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 28, 2009·31 cites·30 claims
- 5093US7499330B2Programming method for NAND EEPROMMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 3, 2009·26 cites·25 claims
Showing the top 50 of 290 patent records by PatentIndex Score.
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