Inventor · disambiguated record
Hsiung-Shih Chang
Also filed as: CHANG HSIUNG-SHIH
19 granted patents·17 citations·filing 2013–2019
90Inventor score
Top patents by PatentIndex Score
19 records- 0183US9502584B1Vertical diode and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2015·Granted Nov 22, 2016·4 cites·9 claims
- 0273US9391139B1Top-side contact structure and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2015·Granted Jul 12, 2016·2 cites·20 claims
- 0371US9666699B1Semiconductor device having field plate disposed on isolation feature and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted May 30, 2017·2 cites·26 claims
- 0467US10056260B2Schottky diode with dielectrically isolated diffusions, and method of manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Aug 21, 2018·1 cites·13 claims
- 0567US9048312B2Semiconductor device and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2013·Granted Jun 2, 2015·2 cites·20 claims
- 0666US9324785B2Semiconductor device and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Apr 26, 2016·1 cites·8 claims
- 0766US9263436B2Semiconductor device and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Feb 16, 2016·2 cites·22 claims
- 0863US9478644B1Semiconductor deviceVANGUARD INT SEMICONDUCT CORP·Filed 2015·Granted Oct 25, 2016·1 cites·24 claims
- 0960US9607944B1Efficient layout placement of a diodeVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Mar 28, 2017·1 cites·10 claims
- 1060US9530732B1Efficient layout placement of a diodeVANGUARD INT SEMICONDUCT CORP·Filed 2015·Granted Dec 27, 2016·1 cites·7 claims
- 1154US9406742B2Semiconductor device having super-junction structuresVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Aug 2, 2016·0 cites·10 claims
- 1250US9666485B2Method for forming semiconductor device having super-junction structuresVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted May 30, 2017·0 cites·8 claims
- 1349US9548375B1Vertical diode and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Jan 17, 2017·0 cites·9 claims
- 1449US9390983B1Semiconductor device and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Jul 12, 2016·0 cites·13 claims
- 1546US9324786B2Semiconductor device and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Apr 26, 2016·0 cites·20 claims
- 1644US9773902B2Trench-gate semiconductor device and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2013·Granted Sep 26, 2017·0 cites·25 claims
- 1741US10347524B2Trench isolation structures and methods for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Jul 9, 2019·0 cites·19 claims
- 1841US9646964B2Semiconductor deviceVANGUARD INT SEMICONDUCT CORP·Filed 2015·Granted May 9, 2017·0 cites·15 claims
- 1936US10984885B2Memory test array and test method thereofJIANGSU ADVANCED MEMORY TECH CO LTD·Filed 2019·Granted Apr 20, 2021·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →