Inventor · disambiguated record
Hidekazu Umeda
Also filed as: UMEDA HIDEKAZU
19 granted patents·2 pending applications·110 citations·filing 2002–2023
93Inventor score
Files withPANASONIC CORP7PANASONIC IP MAN CO LTD7UMEDA HIDEKAZU4MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1SKYLEY NETWORKS INC1
Top patents by PatentIndex Score
21 records- 0194US7381268B2Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitrideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Jun 3, 2008·12 cites·38 claims
- 0293US9911843B2Semiconductor devicePANASONIC IP MAN CO LTD·Filed 2015·Granted Mar 6, 2018·10 cites·29 claims
- 0389US7754012B2Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitridePANASONIC CORP·Filed 2008·Granted Jul 13, 2010·6 cites·27 claims
- 0488US8692292B2Semiconductor device including separated gate electrode and conductive layerUMEDA HIDEKAZU·Filed 2012·Granted Apr 8, 2014·11 cites·12 claims
- 0585US10811525B2Bidirectional switchPANASONIC CORP·Filed 2018·Granted Oct 20, 2020·4 cites·9 claims
- 0685US9484342B2Semiconductor apparatusPANASONIC IP MAN CO LTD·Filed 2015·Granted Nov 1, 2016·5 cites·20 claims
- 0780US10868167B2Semiconductor devicePANASONIC IP MAN CO LTD·Filed 2018·Granted Dec 15, 2020·2 cites·32 claims
- 0880US7092391B2Multi-hop peer-to-peer telecommunications method in a wireless network, radio terminal telecommunications method, and medium recording a program for causing a processor to implement the radio terminal telecommunications methodSKYLEY NETWORKS INC·Filed 2002·Granted Aug 15, 2006·42 cites·14 claims
- 0977US9231059B2Semiconductor device and method of manufacturing the devicePANASONIC CORP·Filed 2013·Granted Jan 5, 2016·4 cites·18 claims
- 1075US8872227B2Nitride semiconductor deviceUMEDA HIDEKAZU·Filed 2012·Granted Oct 28, 2014·4 cites·22 claims
- 1175US8390029B2Semiconductor device for reducing and/or preventing current collapseUMEDA HIDEKAZU·Filed 2009·Granted Mar 5, 2013·6 cites·8 claims
- 1268US11699751B2Semiconductor devicePANASONIC IP MAN CO LTD·Filed 2020·Granted Jul 11, 2023·0 cites·35 claims
- 1365US8569797B2Field effect transistor and method of manufacturing the sameUMEDA HIDEKAZU·Filed 2011·Granted Oct 29, 2013·2 cites·19 claims
- 1453US2023260959A1Method for manufacturing composite structure and method for fabricating semiconductor devicePANASONIC IP MAN CO LTD·Filed 2023·Application pending·0 cites
- 1548US10164011B2Nitride semiconductor devicePANASONIC CORP·Filed 2017·Granted Dec 25, 2018·0 cites·17 claims
- 1647US7959729B2Method for producing group-III-element nitride single crystals and apparatus used thereinUNIV OSAKA·Filed 2004·Granted Jun 14, 2011·2 cites·12 claims
- 1744US11595038B2Control system, switch system, power converter, method for controlling bidirectional switch element, and programPANASONIC IP MAN CO LTD·Filed 2019·Granted Feb 28, 2023·0 cites·9 claims
- 1844US9401403B2Nitride semiconductor structurePANASONIC IP MAN CO LTD·Filed 2015·Granted Jul 26, 2016·0 cites·15 claims
- 1944US8884332B2Nitride semiconductor devicePANASONIC CORP·Filed 2013·Granted Nov 11, 2014·0 cites·20 claims
- 2041US11062981B2Bidirectional switch and bidirectional switch device including the switchPANASONIC CORP·Filed 2018·Granted Jul 13, 2021·0 cites·20 claims
- 2141US2013171811A1Method for manufacturing compound semiconductorPANASONIC CORP·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →