Inventor · disambiguated record
Michael Maldei
Also filed as: MALDEI MICHAEL
11 granted patents·1 pending application·78 citations·filing 1995–2008
88Inventor score
Top patents by PatentIndex Score
12 records- 0169US5562781AAmorphous, hydrogenated carbon (a-C:H) photovoltaic cellUNIV OHIO·Filed 1995·Granted Oct 8, 1996·40 cites·27 claims
- 0265US7163891B2High density DRAM with reduced peripheral device area and method of manufactureINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jan 16, 2007·9 cites·14 claims
- 0365US6960523B2Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM deviceIBM·Filed 2003·Granted Nov 1, 2005·10 cites·15 claims
- 0455US7049193B2Maskless middle-of-line liner depositionINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 23, 2006·5 cites·12 claims
- 0552US6890815B2Reduced cap layer erosion for borderless contactsIBM·Filed 2003·Granted May 10, 2005·5 cites·25 claims
- 0650US8606982B2Derivative logical outputMALDEI MICHAEL·Filed 2008·Granted Dec 10, 2013·3 cites·26 claims
- 0749US6822301B2Maskless middle-of-line liner depositionINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 23, 2004·3 cites·10 claims
- 0847US6909152B2High density DRAM with reduced peripheral device area and method of manufactureINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 21, 2005·3 cites·9 claims
- 0938US6870211B1Self-aligned array contact for memory cellsIBM·Filed 2003·Granted Mar 22, 2005·0 cites·8 claims
- 1038US6740568B2Method to enhance epitaxial regrowth in amorphous silicon contactsINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 25, 2004·0 cites·8 claims
- 1136US2005014332A1Method to improve bitline contact formation using a line maskINFINEON TECHNOLOGIES CORP·Filed 2003·Application pending·0 cites
- 1228US6847092B2Microelectronic capacitor structure with radial current flowINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 25, 2005·0 cites·49 claims
Join the waitlist — get patent alerts
Get an alert when Michael Maldei files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →