Inventor · disambiguated record
Dietrich Stephani
Also filed as: STEPHANI DIETRICH
23 granted patents·780 citations·filing 1986–2011
97Inventor score
Top patents by PatentIndex Score
23 records- 0195US4731694ATouch selection pad and method of manufactureSIEMENS AG·Filed 1987·Granted Mar 15, 1988·88 cites·24 claims
- 0293US6633195B2Hybrid power MOSFETSIEMENS AG·Filed 2001·Granted Oct 14, 2003·92 cites·16 claims
- 0392US6316791B1Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structureSICED ELECT DEV GMBH & CO KG·Filed 2000·Granted Nov 13, 2001·78 cites·18 claims
- 0489US6373318B1Electronic switching device having at least two semiconductor componentsSIEMENS AG·Filed 2001·Granted Apr 16, 2002·62 cites·23 claims
- 0588US5712502ASemiconductor component having an edge termination means with high field blocking capabilitySIEMENS AG·Filed 1995·Granted Jan 27, 1998·86 cites·28 claims
- 0684US6468890B2Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor deviceSICED ELECT DEV GMBH & CO KG·Filed 2001·Granted Oct 22, 2002·36 cites·24 claims
- 0782US5989340AProcess and device for sublimation growing of silicon carbide monocrystalsSIEMENS AG·Filed 1995·Granted Nov 23, 1999·44 cites·11 claims
- 0881US6034385ACurrent-limiting semiconductor configurationSIEMENS AG·Filed 1998·Granted Mar 7, 2000·54 cites·10 claims
- 0979US7646026B2SiC-PN power diodeSICED ELECT DEV GMBH & CO KG·Filed 2006·Granted Jan 12, 2010·8 cites·20 claims
- 1073US4924334AMagnetic storage device with track guidance systemSIEMENS AG·Filed 1988·Granted May 8, 1990·18 cites·18 claims
- 1172US6097039ASilicon carbide semiconductor configuration with a high degree of channel mobilitySIEMENS AG·Filed 1999·Granted Aug 1, 2000·33 cites·21 claims
- 1271US4735920AMethod for structuring silicon carbideSIEMENS AG·Filed 1987·Granted Apr 5, 1988·40 cites·6 claims
- 1368US6455911B1Silicon-based semiconductor component with high-efficiency barrier junction terminationSIEMENS AG·Filed 1996·Granted Sep 24, 2002·27 cites·36 claims
- 1467US6693314B2Junction field-effect transistor with more highly doped connecting regionSICED ELECT DEV GMBH & CO KG·Filed 2001·Granted Feb 17, 2004·13 cites·15 claims
- 1566US6459108B1Semiconductor configuration and current limiting deviceSIEMENS AG·Filed 1999·Granted Oct 1, 2002·25 cites·17 claims
- 1665US4727643AMethod for manufacturing a magnetic head by a thin-film techniqueSIEMENS AG·Filed 1986·Granted Mar 1, 1988·21 cites·5 claims
- 1764US8803160B2Lightly doped silicon carbide wafer and use thereof in high power devicesELLISON ALEXANDRE·Filed 2011·Granted Aug 12, 2014·0 cites·16 claims
- 1864US4843507AMagnetic head with laminated structureSIEMENS AG·Filed 1987·Granted Jun 27, 1989·14 cites·11 claims
- 1960US7482068B2Lightly doped silicon carbide wafer and use thereof in high power devicesNORSTEL AB·Filed 2003·Granted Jan 27, 2009·3 cites·12 claims
- 2056US6232625B1Semiconductor configuration and use thereofSICED ELECT DEV GMBH & CO KG·Filed 1999·Granted May 15, 2001·16 cites·22 claims
- 2154US6188555B1Device for limiting alternating electric currents, in particular in the event of a short circuitSICED ELECT DEV GMBH & CO KG·Filed 1999·Granted Feb 13, 2001·15 cites·51 claims
- 2249US4987510AThin film magnet head for vertical magnetizationSIEMENS AG·Filed 1988·Granted Jan 22, 1991·7 cites·7 claims
- 2336US8097524B2Lightly doped silicon carbide wafer and use thereof in high power devicesELLISON ALEXANDRE·Filed 2009·Granted Jan 17, 2012·0 cites·9 claims
Join the waitlist — get patent alerts
Get an alert when Dietrich Stephani files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →