Inventor · disambiguated record
Jeffrey B. Johnson
Also filed as: JOHNSON JEFFREY · JOHNSON JEFFREY B · JOHNSON JEFFREY BOWMAN · JOHNSON JEFFREY G
136 granted patents·16 pending applications·1,743 citations·filing 1984–2024
99Inventor score
Top patents by PatentIndex Score
152 records- 0196US9312274B1Merged fin structures for finFET devicesIBM·Filed 2014·Granted Apr 12, 2016·27 cites·20 claims
- 0296US9105742B1Dual epitaxial process including spacer adjustmentIBM·Filed 2014·Granted Aug 11, 2015·23 cites·16 claims
- 0396US8395217B1Isolation in CMOSFET devices utilizing buried air bagsCHENG KANGGUO·Filed 2011·Granted Mar 12, 2013·33 cites·18 claims
- 0496US6797553B2Method for making multiple threshold voltage FET using multiple work-function gate materialsIBM·Filed 2002·Granted Sep 28, 2004·119 cites·17 claims
- 0595US8927378B2Trench silicide contact with low interface resistanceIBM·Filed 2013·Granted Jan 6, 2015·17 cites·20 claims
- 0695US7989298B1Transistor having V-shaped embedded stressorIBM·Filed 2010·Granted Aug 2, 2011·27 cites·20 claims
- 0795US7563714B2Low resistance and inductance backside through vias and methods of fabricating sameIBM·Filed 2006·Granted Jul 21, 2009·35 cites·10 claims
- 0894US7768055B2Passive components in the back end of integrated circuitsIBM·Filed 2005·Granted Aug 3, 2010·28 cites·7 claims
- 0994US7652313B2Deep trench contact and isolation of buried photodetectorsIBM·Filed 2005·Granted Jan 26, 2010·22 cites·20 claims
- 1093US8361847B2Stressed channel FET with source/drain buffersIBM·Filed 2011·Granted Jan 29, 2013·16 cites·15 claims
- 1192US9009638B1Estimating transistor characteristics and tolerances for compact modelingIBM·Filed 2013·Granted Apr 14, 2015·17 cites·13 claims
- 1292US7262484B2Structure and method for performance improvement in vertical bipolar transistorsIBM·Filed 2005·Granted Aug 28, 2007·17 cites·10 claims
- 1391US12191351B1Laterally-diffused metal-oxide-semiconductor devices with an air gapGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Granted Jan 7, 2025·1 cites·20 claims
- 1491US6525371B2Self-aligned non-volatile random access memory cell and process to make the sameIBM·Filed 1999·Granted Feb 25, 2003·98 cites·19 claims
- 1590US8236632B2FET structures with trench implantation to improve back channel leakage and body resistanceFRIED DAVID M·Filed 2010·Granted Aug 7, 2012·10 cites·24 claims
- 1690US7851923B2Low resistance and inductance backside through vias and methods of fabricating sameIBM·Filed 2009·Granted Dec 14, 2010·16 cites·15 claims
- 1790US7005665B2Phase change memory cell on silicon-on insulator substrateIBM·Filed 2004·Granted Feb 28, 2006·65 cites·19 claims
- 1889US7825441B2Junction field effect transistor with a hyperabrupt junctionIBM·Filed 2007·Granted Nov 2, 2010·16 cites·35 claims
- 1989US7439561B2Pixel sensor cell for collecting electrons and holesIBM·Filed 2005·Granted Oct 21, 2008·8 cites·2 claims
- 2089US6521506B1Varactors for CMOS and BiCMOS technologiesIBM·Filed 2001·Granted Feb 18, 2003·41 cites·11 claims
- 2189US4900018AExercise machine with multiple exercise stationsISH III ARTHUR B·Filed 1988·Granted Feb 13, 1990·117 cites·11 claims
- 2288US4651897APortable progressive cavity pumpSASHCO INC·Filed 1984·Granted Mar 24, 1987·44 cites·18 claims
- 2387US8193065B2Asymmetric source and drain stressor regionsJOHNSON JEFFREY B·Filed 2011·Granted Jun 5, 2012·7 cites·5 claims
- 2487US6448590B1Multiple threshold voltage FET using multiple work-function gate materialsIBM·Filed 2000·Granted Sep 10, 2002·38 cites·11 claims
- 2587US4809972AExercise machine with multiple exercise stationsRASMUSSEN R A·Filed 1987·Granted Mar 7, 1989·86 cites·27 claims
- 2686US8299535B2Delta monolayer dopants epitaxy for embedded source/drain silicideCHAN KEVIN K·Filed 2010·Granted Oct 30, 2012·9 cites·20 claims
- 2785US8809953B2FET structures with trench implantation to improve back channel leakage and body resistanceFRIED DAVID M·Filed 2012·Granted Aug 19, 2014·6 cites·20 claims
- 2885US6414371B1Process and structure for 50+ gigahertz transistorIBM·Filed 2000·Granted Jul 2, 2002·38 cites·22 claims
- 2984US9911740B2Method, apparatus, and system having super steep retrograde well with engineered dopant profilesGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 6, 2018·3 cites·13 claims
- 3084US9196712B1FinFET extension regionsIBM·Filed 2014·Granted Nov 24, 2015·6 cites·11 claims
- 3184US6812545B2Epitaxial base bipolar transistor with raised extrinsic baseIBM·Filed 2003·Granted Nov 2, 2004·28 cites·7 claims
- 3283US12007269B2Weight measuring shovelJOHNSON JEFFREY·Filed 2021·Granted Jun 11, 2024·1 cites·20 claims
- 3383US8741725B2Butted SOI junction isolation structures and devices and method of fabricationJOHNSON JEFFREY B·Filed 2010·Granted Jun 3, 2014·6 cites·22 claims
- 3483US8569810B2Metal semiconductor alloy contact with low resistanceYU JIAN·Filed 2010·Granted Oct 29, 2013·6 cites·9 claims
- 3583US8288244B2Lateral passive device having dual annular electrodesCOLLINS DAVID S·Filed 2010·Granted Oct 16, 2012·6 cites·4 claims
- 3683US8039354B2Passive components in the back end of integrated circuitsIBM·Filed 2010·Granted Oct 18, 2011·6 cites·5 claims
- 3783US6202985B1Apparatus for removal of vault lids and other heavy coversGROUP 3 MFG INC·Filed 1999·Granted Mar 20, 2001·46 cites·10 claims
- 3882US8633096B2Creating anisotropically diffused junctions in field effect transistor devicesGREENE BRIAN J·Filed 2010·Granted Jan 21, 2014·5 cites·13 claims
- 3981US8407656B2Method and structure for a transistor having a relatively large threshold voltage variation range and for a random number generator incorporating multiple essentially identical transistors having such a large threshold voltage variation rangeHOOK TERENCE B·Filed 2011·Granted Mar 26, 2013·6 cites·25 claims
- 4081US7217628B2High performance integrated vertical transistors and method of making the sameIBM·Filed 2005·Granted May 15, 2007·8 cites·12 claims
- 4181US6026964AActive pixel sensor cell and method of usingIBM·Filed 1997·Granted Feb 22, 2000·51 cites·10 claims
- 4280US10269707B2Semiconductor structures with field effect transistor(s) having low-resistance source/drain contact(s)GLOBALFOUNDRIES INC·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 4380US8338265B2Silicided trench contact to buried conductive layerCOOLBAUGH DOUGLAS D·Filed 2008·Granted Dec 25, 2012·7 cites·16 claims
- 4479US7888156B2Predoped transfer gate for a CMOS image sensorIBM·Filed 2007·Granted Feb 15, 2011·4 cites·8 claims
- 4578US10056408B2Structure and method to form a FinFET deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 21, 2018·2 cites·8 claims
- 4678US9786751B2Semiconductor structures with field effect transistor(s) having low-resistance source/drain contact(s)GLOBALFOUNDRIES INC·Filed 2016·Granted Oct 10, 2017·2 cites·7 claims
- 4778US8759194B2Device structures compatible with fin-type field-effect transistor technologiesGAUTHIER JR ROBERT J·Filed 2012·Granted Jun 24, 2014·3 cites·18 claims
- 4878US7335927B2Lateral silicided diodesIBM·Filed 2006·Granted Feb 26, 2008·6 cites·18 claims
- 4978US7183628B2Structure and method of hyper-abrupt junction varactorsIBM·Filed 2004·Granted Feb 27, 2007·17 cites·13 claims
- 5076US8921939B2Stressed channel FET with source/drain buffersIBM·Filed 2013·Granted Dec 30, 2014·3 cites·8 claims
Showing the top 50 of 152 patent records by PatentIndex Score.
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