Inventor · disambiguated record
Wayne Bao
Also filed as: BAO WAYNE
7 granted patents·6 citations·filing 2012–2016
75Inventor score
Files withSEMICONDUCTOR MFG INT SHANGHAI3BAO WAYNE1SEMICONDUCTOR MFG INT CORP1SEMICONDUCTOR MFG INT SHANGHAI CORP1XIAO HAIBO1
Top patents by PatentIndex Score
7 records- 0169US8871622B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Oct 28, 2014·3 cites·6 claims
- 0264US9287182B2Fabrication method for semiconductor device with three or four-terminal-FinFETSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Mar 15, 2016·2 cites·7 claims
- 0350US9379240B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Jun 28, 2016·0 cites·20 claims
- 0445US9570468B2Semiconductor device with three or four-terminal-FinFETSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Feb 14, 2017·0 cites·6 claims
- 0544US8865593B2Metal silicide layer, NMOS transistor, and fabrication methodXIAO HAIBO·Filed 2012·Granted Oct 21, 2014·1 cites·16 claims
- 0643US9312386B2Method for forming fin FET structure with dual-stress spacersSEMICONDUCTOR MFG INT CORP·Filed 2015·Granted Apr 12, 2016·0 cites·5 claims
- 0740US9099558B2Fin FET structure with dual-stress spacers and method for forming the sameBAO WAYNE·Filed 2012·Granted Aug 4, 2015·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →