Inventor · disambiguated record
Tetsuo Kunii
Also filed as: KUNII TETSUO
16 granted patents·4 pending applications·148 citations·filing 1997–2015
92Inventor score
Top patents by PatentIndex Score
20 records- 0183US7511575B2High-frequency power amplifierMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Mar 31, 2009·17 cites·8 claims
- 0281US6603190B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Aug 5, 2003·22 cites·5 claims
- 0377US7557389B2Field-effect transistorMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Jul 7, 2009·8 cites·7 claims
- 0477US6307245B1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 23, 2001·24 cites·3 claims
- 0576US6713793B1Field effect transistor structure with bent gateMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Mar 30, 2004·23 cites·8 claims
- 0673US8796697B2Semiconductor device including transistor chips having oblique gate electrode fingersKUNII TETSUO·Filed 2013·Granted Aug 5, 2014·5 cites·10 claims
- 0771US7528443B2Semiconductor device with recessed gate and shield electrodeMITSUBISHI ELECTRIC CORP·Filed 2006·Granted May 5, 2009·5 cites·9 claims
- 0865US5883407ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 16, 1999·33 cites·8 claims
- 0961US10355130B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Jul 16, 2019·1 cites·4 claims
- 1049US6911837B2Method and apparatus for evaluating and adjusting microwave integrated circuitMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Jun 28, 2005·3 cites·11 claims
- 1145US9117742B2High electron mobility transistor with shortened recovery timeMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 25, 2015·0 cites·5 claims
- 1240US6335265B1Method for manufacturing semiconductor device and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jan 1, 2002·7 cites·5 claims
- 1339US2007145415A1High-frequency semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Application pending·0 cites
- 1438US2006231871A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Application pending·0 cites
- 1538US2005133829A1High-frequency semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2004·Application pending·0 cites
- 1637US7042053B2Semiconductor device with polymer insulation of some electrodesMITSUBISHI ELECTRIC CORP·Filed 2003·Granted May 9, 2006·0 cites·8 claims
- 1737US2005263788A1Heterojunction field effect semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2005·Application pending·0 cites
- 1836US7304329B2Field effect transistorMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Dec 4, 2007·0 cites·4 claims
- 1935US9543902B2Power amplifierMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Jan 10, 2017·0 cites·8 claims
- 2034US8232609B2Semiconductor device including field effect transistor with reduced electric field concentrationKUNII TETSUO·Filed 2010·Granted Jul 31, 2012·0 cites·18 claims
Join the waitlist — get patent alerts
Get an alert when Tetsuo Kunii files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →