Inventor · disambiguated record
Daehwan Kang
Also filed as: KANG DAEHWAN
7 granted patents·3 pending applications·66 citations·filing 2009–2025
82Inventor score
Top patents by PatentIndex Score
10 records- 0187US9710747B2Neuromophic system and configuration method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 18, 2017·32 cites·16 claims
- 0286US7907437B2Resistance variable memory device and method of writing dataSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 15, 2011·19 cites·20 claims
- 0379US9230642B2Variable resistance memory device and a variable resistance memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 5, 2016·8 cites·20 claims
- 0476US10971548B2Variable resistance memory device including symmetrical memory cell arrangements and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 6, 2021·2 cites·32 claims
- 0575US8014190B2Resistance variable memory device and method of writing dataSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Sep 6, 2011·5 cites·16 claims
- 0655US2025273262A12t dram cell with asymmetric parasitic capacitor and 2t dram cell arrayPOSTECH RES & BUSINESS DEV FOUND·Filed 2025·Application pending·0 cites
- 0754US2013299766A1Variable resistance memory device and methods of forming the samePARK DOO-HWAN·Filed 2013·Application pending·0 cites
- 0853US11950517B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
- 0947US2011155989A1Variable resistance memory device and methods of forming the samePARK DOO-HWAN·Filed 2010·Application pending·0 cites
- 1042US12029048B2Resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 2, 2024·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →