Inventor · disambiguated record
Jui-Che Tsai
Also filed as: TSAI JUI-CHE
48 granted patents·14 pending applications·153 citations·filing 2004–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD50TAIWAN SEMICONDUCTOR MFG4HON HAI PREC IND CO LTD2UNIV CALIFORNIA2CALIFORNIA INST OF TECHN1
Top patents by PatentIndex Score
62 records- 0198US10164640B1Method and device to speed-up leakage based PUF generators under extreme operation conditionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·32 cites·20 claims
- 0297US11601117B1Sense amplifier for coupling effect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·3 cites·19 claims
- 0397US11049555B1SRAM power-up random number generatorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 29, 2021·7 cites·20 claims
- 0496US11903188B2Memory devices, semiconductor devices, and methods of operating a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 0596US11528151B2Physically unclonable function (PUF) generationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·5 cites·20 claims
- 0694US12022014B2Physically unclonable function (PUF) generationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·1 cites·20 claims
- 0794US11810635B2Sense amplifier for coupling effect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 7, 2023·1 cites·20 claims
- 0894US11238908B2Memory circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·3 cites·20 claims
- 0993US7072539B2Wavelength-selective 1×N2 switches with two-dimensional input/output fiber arraysUNIV CALIFORNIA·Filed 2005·Granted Jul 4, 2006·32 cites·39 claims
- 1091US2025363277A1Design-for-test circuits and methods of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1190US7336867B2Wavelength-selective 1×N2 switches with two-dimensional input/output fiber arraysUNIV CALIFORNIA·Filed 2006·Granted Feb 26, 2008·19 cites·25 claims
- 1289US2025322873A1Non-volatile static random access memory (nvsram) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1388US9001611B1Three-dimensional two port register fileTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 7, 2015·9 cites·20 claims
- 1485US11626157B2SRAM power-up random number generatorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·1 cites·20 claims
- 1584US2025157501A1Sense amplifier for coupling effect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1682US12380950B2Non-volatile static random access memory (NVSRAM) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 1782US9583181B1SRAM device capable of working in multiple low voltages without loss of performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 28, 2017·3 cites·17 claims
- 1881US12190986B2Sense amplifier for coupling effect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 1980US11545218B2Nonvolatile SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·1 cites·20 claims
- 2079US12445312B2I/O circuit design for SRAM-based PUF generatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
- 2178US11984164B2Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
- 2278US2025210107A1Nonvolatile sramTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2378US2024305481A1Physically unclonable function (puf) generationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2477US12190945B2SRAM power-up random number generatorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 2577US2025191652A1Memory device with additional write bit linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2676US11200924B2Method of minimizing read-disturb-write effect of SRAM circuit and SRAM circuit thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 14, 2021·1 cites·20 claims
- 2776US11195567B2Balanced negative bitline voltage for a write assist circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·2 cites·20 claims
- 2876US2025140311A1Sram power-up random number generatorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2975US12284804B2Memory devices, semiconductor devices, and methods of operations a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 22, 2025·0 cites·20 claims
- 3074US2025022501A1Balanced negative bitline voltage for a write assist circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3173US12260904B2Memory device with additional write bit linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 3273US9230622B2Simultaneous two/dual port access on 6T SRAMTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jan 5, 2016·5 cites·25 claims
- 3373US7378655B2Apparatus and method for sensing electromagnetic radiation using a tunable deviceCALIFORNIA INST OF TECHN·Filed 2004·Granted May 27, 2008·16 cites·25 claims
- 3472US12254923B2Nonvolatile SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 3572US11657873B2Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·0 cites·20 claims
- 3672US10666438B2Balanced coupling structure for physically unclonable function (PUF) applicationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·1 cites·20 claims
- 3770US12087345B2Balanced negative bitline voltage for a write assist circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
- 3868US11949799B2I/O circuit design for SRAM-based PUF generatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
- 3966US10972292B2I/O circuit design for SRAM-based PUF generatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·1 cites·20 claims
- 4065US11532351B2Memory device with additional write bit linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 4165US11189342B2Memory macro and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·0 cites·20 claims
- 4265US2024295603A1Design-for-test circuits and methods of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4363US10818327B2Memory circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 27, 2020·1 cites·20 claims
- 4462US2025218932A1Strap cells in semiconductor memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4561US12260654B2Pedestrian detection via a boundary cylinder modelVOLVO CAR CORP·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 4660US8411479B2Memory circuits, systems, and methods for routing the memory circuitsLEE CHENG HUNG·Filed 2010·Granted Apr 2, 2013·2 cites·18 claims
- 4759US8565009B2Access to multi-port devicesWU CHING-WEI·Filed 2010·Granted Oct 22, 2013·3 cites·20 claims
- 4859US7923988B2Test equipment and test system using the sameHON HAI PREC IND CO LTD·Filed 2009·Granted Apr 12, 2011·1 cites·18 claims
- 4958US10511309B1Method and device to speed-up leakage based PUF generators under extreme operation conditionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·21 claims
- 5057US11107530B2Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·15 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →