Inventor · disambiguated record
Toshinori Numata
Also filed as: NUMATA TOSHINORI
24 granted patents·4 pending applications·463 citations·filing 1999–2019
95Inventor score
Top patents by PatentIndex Score
28 records- 0198US9698272B1Transistor and semiconductor memory deviceTOSHIBA KK·Filed 2016·Granted Jul 4, 2017·161 cites·20 claims
- 0296US7622773B2Semiconductor device including multi-gate metal-insulator-semiconductor (MIS) transistorTOSHIBA KK·Filed 2007·Granted Nov 24, 2009·40 cites·17 claims
- 0395US6043536ASemiconductor deviceTOSHIBA KK·Filed 1999·Granted Mar 28, 2000·146 cites·20 claims
- 0492US9806082B2Semiconductor memory device including a sense amplifier on a semiconductor substrate, a memory cell including a capacitor and a transistor including conductive lines electrically connected to the sense amplifierTOSHIBA MEMORY CORP·Filed 2016·Granted Oct 31, 2017·13 cites·17 claims
- 0592US8492219B2Semiconductor device manufacturing methodSAITOH MASUMI·Filed 2012·Granted Jul 23, 2013·15 cites·17 claims
- 0690US10056150B2Non-volatile semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Aug 21, 2018·11 cites·18 claims
- 0790US8710485B2Semiconductor device and method of manufacturing the sameSAITOH MASUMI·Filed 2012·Granted Apr 29, 2014·14 cites·34 claims
- 0890US7619239B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Nov 17, 2009·20 cites·4 claims
- 0988US8932915B2Semiconductor device and method for manufacturing the sameSAITOH MASUMI·Filed 2011·Granted Jan 13, 2015·7 cites·6 claims
- 1087US10510862B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Dec 17, 2019·4 cites·7 claims
- 1185US9755055B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2014·Granted Sep 5, 2017·4 cites·11 claims
- 1283US10367054B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Jul 30, 2019·4 cites·19 claims
- 1383US9530891B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2013·Granted Dec 27, 2016·6 cites·1 claims
- 1480US9978441B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted May 22, 2018·5 cites·20 claims
- 1577US10049720B2Dynamic random access memory (DRAM)TOSHIBA KK·Filed 2017·Granted Aug 14, 2018·4 cites·20 claims
- 1675US8518769B2Semiconductor device and method of manufacturing the sameOTA KENSUKE·Filed 2012·Granted Aug 27, 2013·4 cites·4 claims
- 1769US7592646B2Semiconductor device with a SiGe layer having uniaxial lattice strainTOSHIBA KK·Filed 2006·Granted Sep 22, 2009·4 cites·6 claims
- 1861US11380773B2Ferroelectric memory deviceKIOXIA CORP·Filed 2019·Granted Jul 5, 2022·0 cites·4 claims
- 1955US8669162B2Semiconductor device and method of manufacturing the sameNAKABAYASHI YUKIO·Filed 2012·Granted Mar 11, 2014·1 cites·7 claims
- 2047US8907406B2Transistor having impurity distribution controlled substrate and method of manufacturing the sameOTA KENSUKE·Filed 2012·Granted Dec 9, 2014·0 cites·10 claims
- 2143US10332581B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Jun 25, 2019·0 cites·13 claims
- 2242US9111965B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2013·Granted Aug 18, 2015·0 cites·13 claims
- 2342US8994087B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2013·Granted Mar 31, 2015·0 cites·13 claims
- 2441US2014131811A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2013·Application pending·0 cites
- 2537US8999801B2Nanowire channel field effect device and method for manufacturing the sameOTA KENSUKE·Filed 2011·Granted Apr 7, 2015·0 cites·7 claims
- 2637US2012146053A1Semiconductor device and method of manufacturing the sameSAITOH MASUMI·Filed 2011·Application pending·0 cites
- 2737US2012241722A1Field effect transistorIKEDA KEIJI·Filed 2011·Application pending·0 cites
- 2833US2006170011A1Semiconductor device and manufacturing method thereofIRISAWA TOSHIFUMI·Filed 2005·Application pending·0 cites
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