Inventor · disambiguated record
Mueng-Ryul Lee
Also filed as: LEE MUENG-RYUL
11 granted patents·3 pending applications·152 citations·filing 1998–2015
88Inventor score
Top patents by PatentIndex Score
14 records- 0190US5907173AHigh voltage field effect transistor and method of fabricating the sameLG SEMICON CO LTD·Filed 1998·Granted May 25, 1999·101 cites·8 claims
- 0280US8569836B2Semiconductor deviceLEE MUENG-RYUL·Filed 2011·Granted Oct 29, 2013·6 cites·15 claims
- 0373US8686498B2Lateral double diffused MOS device and method for manufacturing the sameLEE MUENG-RYUL·Filed 2011·Granted Apr 1, 2014·4 cites·18 claims
- 0470US8431990B2Semiconductor deviceLEE NAM-YOUNG·Filed 2010·Granted Apr 30, 2013·4 cites·8 claims
- 0569US6258674B1High voltage field effect transistor and method of fabricating the sameLG SEMICON CO LTD·Filed 1999·Granted Jul 10, 2001·31 cites·10 claims
- 0667US7446387B2High voltage transistor and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 4, 2008·4 cites·38 claims
- 0763US8058703B2Semiconductor transistor device and method of manufacturing the sameLEE MUENG-RYUL·Filed 2008·Granted Nov 15, 2011·2 cites·20 claims
- 0848US2009253234A1Methods of fabricating lateral dmos transistors including retrograde regions thereinLEE MUENG-RYUL·Filed 2009·Application pending·0 cites
- 0947US9679983B2Semiconductor devices including threshold voltage control regionsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 13, 2017·0 cites·10 claims
- 1045US7960785B2Semiconductor integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 14, 2011·0 cites·20 claims
- 1144US2009009434A1High power address driver and display device employing the sameKIM YONG-DON·Filed 2008·Application pending·0 cites
- 1244US2007090451A1Lateral dmos transistors including retrograde regions therein and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1343US7446000B2Method of fabricating semiconductor device having gate dielectrics with different thicknessesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 4, 2008·0 cites·20 claims
- 1441US8951866B2Methods of fabricating semiconductor devices and semiconductor devices including threshold voltage control regionsLEE MUENG-RYUL·Filed 2010·Granted Feb 10, 2015·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →