Inventor · disambiguated record
Pei-Chao Su
Also filed as: SU PEI-CHAO
9 granted patents·1 pending application·49 citations·filing 2009–2025
86Inventor score
Top patents by PatentIndex Score
10 records- 0191US8202776B2Method for protecting a gate structure during contact formationCHANG HONG-DYI·Filed 2009·Granted Jun 19, 2012·20 cites·20 claims
- 0288US9105570B2Methods for introducing carbon to a semiconductor structureSU YU-CHEN·Filed 2012·Granted Aug 11, 2015·14 cites·20 claims
- 0386US8497169B2Method for protecting a gate structure during contact formationCHANG HONG-DYI·Filed 2012·Granted Jul 30, 2013·7 cites·15 claims
- 0484US8648446B2Method for protecting a gate structure during contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 11, 2014·5 cites·20 claims
- 0583US2025315942A1Hot spot defect detecting method and hot spot defect detecting systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0679US12387318B2Hot spot defect detecting method and hot spot defect detecting systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 0779US8970015B2Method for protecting a gate structure during contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 3, 2015·3 cites·20 claims
- 0867US11900586B2Hot spot defect detecting method and hot spot defect detecting systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 13, 2024·0 cites·20 claims
- 0954US10872406B2Hot spot defect detecting method and hot spot defect detecting systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 22, 2020·0 cites·20 claims
- 1050US9525024B2Methods for introducing carbon to a semiconductor structure and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 20, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →