Inventor · disambiguated record
Piet Vanmeerbeek
Also filed as: VANMEERBEEK PIET
14 granted patents·2 pending applications·34 citations·filing 2013–2020
88Inventor score
Top patents by PatentIndex Score
16 records- 0195US11335798B2Enhancement mode MISHEMT with GaN channel regrowth under a gate areaSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted May 17, 2022·4 cites·16 claims
- 0289US10269947B1Electronic device including a transistor including III-V materials and a process of forming the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Apr 23, 2019·6 cites·20 claims
- 0386US10937781B1Electronic device including a protection circuitSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Mar 2, 2021·6 cites·20 claims
- 0485US10964733B2Opto-electronic HEMTSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Mar 30, 2021·3 cites·20 claims
- 0584US10680094B2Electronic device including a high electron mobility transistor including a gate electrodeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jun 9, 2020·4 cites·16 claims
- 0681US9219138B2Semiconductor device having localized charge balance structure and methodSEMICONDUCTOR COMPONENTS IND·Filed 2013·Granted Dec 22, 2015·5 cites·20 claims
- 0778US9287371B2Semiconductor device having localized charge balance structure and methodSEMICONDUCTOR COMPONENTS IND·Filed 2013·Granted Mar 15, 2016·5 cites·16 claims
- 0871US10797153B2Process of forming an electronic device including an access regionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Oct 6, 2020·1 cites·20 claims
- 0952US10811527B2Electronic device including high electron mobility transistorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Oct 20, 2020·0 cites·20 claims
- 1052US10505000B2Electronic device including a transistor structure having different semiconductor base materialsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Dec 10, 2019·0 cites·20 claims
- 1149US10797152B2Process of forming an electronic device including an access regionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Oct 6, 2020·0 cites·8 claims
- 1249US9412811B2Semiconductor device having localized charge balance structure and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Aug 9, 2016·0 cites·20 claims
- 1346US9515179B2Electronic devices including a III-V transistor having a homostructure and a process of forming the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Dec 6, 2016·0 cites·19 claims
- 1444US2022052163A1Gate control for hemt devices using dielectric between gate edges and gate field platesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Application pending·0 cites
- 1543US10090380B2Semiconductor device having localized charge balance structure and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Oct 2, 2018·0 cites·20 claims
- 1636US2020219871A1Electronic Device Including a HEMT Including a Buried RegionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →