Inventor · disambiguated record
Jae-Jik Baek
Also filed as: BAEK JAE JIK
21 granted patents·6 pending applications·79 citations·filing 2011–2024
94Inventor score
Top patents by PatentIndex Score
27 records- 0197US11482602B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 25, 2022·6 cites·20 claims
- 0295US12009398B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 11, 2024·2 cites·20 claims
- 0391US9728535B2Methods of fabricating semiconductor devices including fin-shaped active regionsYOUN YOUNG-SANG·Filed 2016·Granted Aug 8, 2017·11 cites·18 claims
- 0489US9305825B2Methods of fabricating semiconductor devices including fin-shaped active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 5, 2016·7 cites·20 claims
- 0586US8604550B2Semiconductor devices including gate structure and method of fabricating the sameLEE KWANG-WOOK·Filed 2011·Granted Dec 10, 2013·10 cites·18 claims
- 0685US9960241B2Semiconductor device for manufacturingSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 1, 2018·5 cites·20 claims
- 0784US10128236B2Semiconductor device and method for fabricating the sameJEONG JI MIN·Filed 2016·Granted Nov 13, 2018·6 cites·16 claims
- 0882US10090190B2Methods of fabricating semiconductor devices including fin-shaped active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 2, 2018·2 cites·18 claims
- 0981US11569065B2Substrate processing apparatus, signal source device, method of processing material layer, and method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 31, 2023·4 cites·10 claims
- 1081US9716162B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 25, 2017·3 cites·20 claims
- 1180US8946026B2Methods of fabricating a semiconductor device including metal gate electrodesCHOI SUKHUN·Filed 2011·Granted Feb 3, 2015·6 cites·28 claims
- 1279US10734380B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 4, 2020·2 cites·3 claims
- 1379US9136135B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 15, 2015·4 cites·12 claims
- 1477US2024297232A1Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1574US10438891B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 8, 2019·2 cites·17 claims
- 1671US8652915B2Methods of fabricating semiconductor devices using preliminary trenches with epitaxial growthAHN KEVIN·Filed 2011·Granted Feb 18, 2014·4 cites·16 claims
- 1768US12456603B2Substrate processing apparatus, signal source device, method of processing material layer, and method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 28, 2025·0 cites·10 claims
- 1868US9754880B2Semiconductor devices including a contact structure and methods of manufacturing the sameBAEK JAE-JIK·Filed 2016·Granted Sep 5, 2017·2 cites·19 claims
- 1967US9972696B2Etching method and method of fabricating a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 15, 2018·1 cites·18 claims
- 2065US9613811B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 4, 2017·1 cites·17 claims
- 2161US10424503B2Methods of fabricating semiconductor devices including fin-shaped active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 24, 2019·0 cites·20 claims
- 2259US9461148B2Semiconductor device and method of fabricating the samePARK JAE-YOUNG·Filed 2013·Granted Oct 4, 2016·1 cites·16 claims
- 2352US2018197861A1Semiconductor devices including varied depth recesses for contactsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 2449US2017301773A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 2548US2016351570A1Semiconductor devices including varied depth recesses for contactsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
- 2641US2014206169A1Methods of Fabricating Semiconductor Device Using Nitridation of Isolation LayersSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2738US2012049250A1Semiconductor Integrated Circuit Device Including an Epitaxial LayerPARK SANG-JINE·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →